TY - JOUR
T1 - Formation of semi-insulating layers on semiconducting β-Ga 2O3 single crystals by thermal oxidation
AU - Oshima, Takayoshi
AU - Kaminaga, Kenichi
AU - Mukai, Akira
AU - Sasaki, Kohei
AU - Masui, Takekazu
AU - Kuramata, Akito
AU - Yamakoshi, Shigenobu
AU - Fujita, Shizuo
AU - Ohtomo, Akira
PY - 2013/5
Y1 - 2013/5
N2 - Semi-insulating layers (SIL) were formed on the surfaces of nominally undoped β-Ga2O3 (010) single crystals by thermal oxidation. Capacitance- voltage measurement with double Schottky configuration was performed to evaluate the increase in the thickness of the SIL as a function of annealing temperature and time. A SiO2 layer prepared on the surface prevented the extension of the SIL, indicating that oxygen incorporation from air and successive bulk diffusion dominated the carrier compensation process. The activation energy of oxygen diffusion coefficient was estimated to be 4.1 eV.
AB - Semi-insulating layers (SIL) were formed on the surfaces of nominally undoped β-Ga2O3 (010) single crystals by thermal oxidation. Capacitance- voltage measurement with double Schottky configuration was performed to evaluate the increase in the thickness of the SIL as a function of annealing temperature and time. A SiO2 layer prepared on the surface prevented the extension of the SIL, indicating that oxygen incorporation from air and successive bulk diffusion dominated the carrier compensation process. The activation energy of oxygen diffusion coefficient was estimated to be 4.1 eV.
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U2 - 10.7567/JJAP.52.051101
DO - 10.7567/JJAP.52.051101
M3 - Article
AN - SCOPUS:84880909275
SN - 0021-4922
VL - 52
JO - Japanese Journal of Applied Physics
JF - Japanese Journal of Applied Physics
IS - 5 PART 1
M1 - 051101
ER -