Formation of Si and Ge films and micropatterns by wet process using laser direct writing method

Akira Watanabe

doi:10.1117/12.873281

Formation of Si and Ge films and micropatterns by wet process using laser direct writing method

Akira Watanabe

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

1 Citation (Scopus)

Abstract

The studies toward the formation of Si and Ge films and micropatterns by wet process using laser direct writing method are reported. First is the the formation of Si film by laser scanning irradiation to Si nano- or micro-particle dispersed films. By using organogermanium nanocluster (OrGe) as a dispersion medium of Si particles, a homogeneous Si film was formed by laser scanning irradiation on a Si particle/OrGe composite film. The micro-Raman spectra showed the formation of the polycrystalline Ge and SiGe alloy during the fusion of the Si particles by laser irradiation. The second is the formation of the Si and Ge micropatterns by LLDW (liquid phase laser direct writing) method. Micro-Raman spectra showed the formation of polycrystalline Si and Ge micropatterns by laser irradiation on the interfaces of SiCl₄/substrate and GeCl ₄/substrate, respectively.

Original language	English
Title of host publication	Laser-Based Micro- and Nanopackaging and Assembly V
DOIs	https://doi.org/10.1117/12.873281
Publication status	Published - 2011 Mar 31
Event	Laser-Based Micro- and Nanopackaging and Assembly V - San Francisco, CA, United States Duration: 2011 Jan 25 → 2011 Jan 27

Publication series

Name	Proceedings of SPIE - The International Society for Optical Engineering
Volume	7921
ISSN (Print)	0277-786X

Other

Other	Laser-Based Micro- and Nanopackaging and Assembly V
Country/Territory	United States
City	San Francisco, CA
Period	11/1/25 → 11/1/27

Keywords

Germanium semiconductor
Laser direct writing
Laser scanning irradiation
Liquid phase laser direct writing
Organogermanium nanocluster
SiGe alloy
Silicon semiconductor
Wet process

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Computer Science Applications
Applied Mathematics
Electrical and Electronic Engineering

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10.1117/12.873281

Cite this

Watanabe, A 2011, Formation of Si and Ge films and micropatterns by wet process using laser direct writing method. in Laser-Based Micro- and Nanopackaging and Assembly V., 792105, Proceedings of SPIE - The International Society for Optical Engineering, vol. 7921, Laser-Based Micro- and Nanopackaging and Assembly V, San Francisco, CA, United States, 11/1/25. https://doi.org/10.1117/12.873281

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title = "Formation of Si and Ge films and micropatterns by wet process using laser direct writing method",

abstract = "The studies toward the formation of Si and Ge films and micropatterns by wet process using laser direct writing method are reported. First is the the formation of Si film by laser scanning irradiation to Si nano- or micro-particle dispersed films. By using organogermanium nanocluster (OrGe) as a dispersion medium of Si particles, a homogeneous Si film was formed by laser scanning irradiation on a Si particle/OrGe composite film. The micro-Raman spectra showed the formation of the polycrystalline Ge and SiGe alloy during the fusion of the Si particles by laser irradiation. The second is the formation of the Si and Ge micropatterns by LLDW (liquid phase laser direct writing) method. Micro-Raman spectra showed the formation of polycrystalline Si and Ge micropatterns by laser irradiation on the interfaces of SiCl4/substrate and GeCl 4/substrate, respectively.",

keywords = "Germanium semiconductor, Laser direct writing, Laser scanning irradiation, Liquid phase laser direct writing, Organogermanium nanocluster, SiGe alloy, Silicon semiconductor, Wet process",

author = "Akira Watanabe",

year = "2011",

month = mar,

day = "31",

doi = "10.1117/12.873281",

language = "English",

isbn = "9780819484581",

series = "Proceedings of SPIE - The International Society for Optical Engineering",

booktitle = "Laser-Based Micro- and Nanopackaging and Assembly V",

note = "Laser-Based Micro- and Nanopackaging and Assembly V ; Conference date: 25-01-2011 Through 27-01-2011",

}

TY - GEN

T1 - Formation of Si and Ge films and micropatterns by wet process using laser direct writing method

AU - Watanabe, Akira

PY - 2011/3/31

Y1 - 2011/3/31

N2 - The studies toward the formation of Si and Ge films and micropatterns by wet process using laser direct writing method are reported. First is the the formation of Si film by laser scanning irradiation to Si nano- or micro-particle dispersed films. By using organogermanium nanocluster (OrGe) as a dispersion medium of Si particles, a homogeneous Si film was formed by laser scanning irradiation on a Si particle/OrGe composite film. The micro-Raman spectra showed the formation of the polycrystalline Ge and SiGe alloy during the fusion of the Si particles by laser irradiation. The second is the formation of the Si and Ge micropatterns by LLDW (liquid phase laser direct writing) method. Micro-Raman spectra showed the formation of polycrystalline Si and Ge micropatterns by laser irradiation on the interfaces of SiCl4/substrate and GeCl 4/substrate, respectively.

AB - The studies toward the formation of Si and Ge films and micropatterns by wet process using laser direct writing method are reported. First is the the formation of Si film by laser scanning irradiation to Si nano- or micro-particle dispersed films. By using organogermanium nanocluster (OrGe) as a dispersion medium of Si particles, a homogeneous Si film was formed by laser scanning irradiation on a Si particle/OrGe composite film. The micro-Raman spectra showed the formation of the polycrystalline Ge and SiGe alloy during the fusion of the Si particles by laser irradiation. The second is the formation of the Si and Ge micropatterns by LLDW (liquid phase laser direct writing) method. Micro-Raman spectra showed the formation of polycrystalline Si and Ge micropatterns by laser irradiation on the interfaces of SiCl4/substrate and GeCl 4/substrate, respectively.

KW - Germanium semiconductor

KW - Laser direct writing

KW - Laser scanning irradiation

KW - Liquid phase laser direct writing

KW - Organogermanium nanocluster

KW - SiGe alloy

KW - Silicon semiconductor

KW - Wet process

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DO - 10.1117/12.873281

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T3 - Proceedings of SPIE - The International Society for Optical Engineering

BT - Laser-Based Micro- and Nanopackaging and Assembly V

T2 - Laser-Based Micro- and Nanopackaging and Assembly V

Y2 - 25 January 2011 through 27 January 2011

ER -

Formation of Si and Ge films and micropatterns by wet process using laser direct writing method

Abstract

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