TY - JOUR
T1 - Formation of single domain Si(001)4 × 3-In surface by surface electromigration
AU - Kono, S.
AU - Goto, T.
AU - Shimomura, M.
AU - Abukawa, T.
N1 - Funding Information:
The authors are grateful to Dr. K. Sakamoto and Dr. T. Sakamoto of Electrotechnical Laboratory for the supply of sample Si wafers. Part of this work is supported by the Grant-in-Aid for Creative Basic Research (09NP1201) of the Ministry of Education, Science, Sports and Culture of Japan.
PY - 1999/9/10
Y1 - 1999/9/10
N2 - The formation of single-domain Si(001)4 × 3-In surfaces with several degrees of domain ratio is reported. A single-domain Si(001)2 × 1 surface was used as a substrate. A single-domain Si(001)3 × 4-In surface with a good domain ratio is found, the directional relationship of which is such that the threefold direction of 3 × 4-In corresponds to the twofold direction of substrate. Two other 4 × 3-In surfaces with poor domain ratios are found, the directional relationship of which is such that the fourfold direction corresponds to the twofold direction of substrate. The formation of these 4 × 3-In surfaces is explained by the electromigration of surface Si, the amount of which is dependent on the temperature of direct current annealing.
AB - The formation of single-domain Si(001)4 × 3-In surfaces with several degrees of domain ratio is reported. A single-domain Si(001)2 × 1 surface was used as a substrate. A single-domain Si(001)3 × 4-In surface with a good domain ratio is found, the directional relationship of which is such that the threefold direction of 3 × 4-In corresponds to the twofold direction of substrate. Two other 4 × 3-In surfaces with poor domain ratios are found, the directional relationship of which is such that the fourfold direction corresponds to the twofold direction of substrate. The formation of these 4 × 3-In surfaces is explained by the electromigration of surface Si, the amount of which is dependent on the temperature of direct current annealing.
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U2 - 10.1016/S0039-6028(99)00555-5
DO - 10.1016/S0039-6028(99)00555-5
M3 - Conference article
AN - SCOPUS:0033319463
SN - 0039-6028
VL - 438
SP - 83
EP - 90
JO - Surface Science
JF - Surface Science
IS - 1-3
T2 - Proceedings of the 1998 International Symposium on Surface and Interface: Properties of Different Symmetry Crossing 98 (ISSI PDSC-98)
Y2 - 19 November 1998 through 21 November 1998
ER -