Formation of Zn-doped CuInSe2 films by thermal annealing using dimethylzinc

M. Sugiyama, A. Kinoshita, A. Miyama, H. Nakanishi, S. F. Chichibu

Research output: Contribution to journalArticlepeer-review

16 Citations (Scopus)


Copper indium diselenide (CuInSe2:CIS) pn-homojunction diodes were fabricated by the thermal diffusion of Zn into the p-type CIS films at 300 °C for 5 min using a dimethylzinc [(CH3)2Zn:DMZn] vapor. This method does not require any additional processing equipment since the diffusion can be carried out subsequent to the selenization of a Cu-In precursor using organoselenium liquid, such as diethylselenide [(C2H5)2Se:DESe]. A donor-to-acceptor pair emission attributable to Zn impurity was observed in the low-temperature photoluminescence spectrum. From the capacitance-voltage characteristics, the depletion layer width and diffusion potential of the junction were estimated as 300 nm and 0.6-0.7 V, respectively. The method is highly advantageous for the development of low-cost solar modules.

Original languageEnglish
Pages (from-to)794-797
Number of pages4
JournalJournal of Crystal Growth
Issue number4
Publication statusPublished - 2008 Feb 15


  • A1. Growth models
  • A3. Physical vapor deposition processes
  • B2. Semiconducting ternary compounds

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry


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