Four-terminal FinFETs fabricated using an etch-back gate separation

Kazuhiko Endo, Yuki Ishikawa, Yongxun Liu, Kenichi Ishii, Takashi Matsukawa, Shin Ichi O'uchi, Meishoku Masahara, Etsuro Sugimata, Jyunichi Tsukada, Hiromi Yamauchi, Eiichi Suzuki

Research output: Contribution to journalArticlepeer-review

16 Citations (Scopus)


A novel resist etch-back process for fabrication of separated-gate four-terminal FinFETs has been investigates. This process enabled co-fabrication of three-terminal (3T) and four-terminal (4T) FinFETs on a same chip. The fabricated 3T-FinFET shows excellent sub-threshold characteristics and drain induced barrier lowering (DIBL) value whereas the 4T-FinFET provides efficient Vth controllability. The effective Vth controllability with keeping a small sub-threshold slope has been confirmed in the synchronized double gate (DD) operation mode.

Original languageEnglish
Pages (from-to)201-204
Number of pages4
JournalIEEE Transactions on Nanotechnology
Issue number2
Publication statusPublished - 2007 Mar


  • Etch-back
  • FinFET
  • Four-terminal
  • Gate-separation
  • V control


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