TY - JOUR
T1 - Fourfold symmetric anisotropic magnetoresistance in half-metallic Co2MnSi Heusler alloy thin films
AU - Oogane, Mikihiko
AU - McFadden, Anthony P.
AU - Kota, Yohei
AU - Brown-Heft, Tobias L.
AU - Tsunoda, Masakiyo
AU - Ando, Yasuo
AU - Palmstrøm, Chris J.
N1 - Funding Information:
This work was supported by the Center for Spintronics Research Network (CSRN), S-Innovation program, Japan Science and Technology Agency (JST), and U.S. Department of Energy (DE-SC0014388). The research reported here made use of shared facilities of the UCSB MRSEC (NSF DMR 1720256), a member of the Materials Research Facilities Network.
Publisher Copyright:
© 2018 The Japan Society of Applied Physics.
PY - 2018/6
Y1 - 2018/6
N2 - In this study, we systematically investigated the anisotropic magnetoresistance (AMR) effect in half-metallic Co2MnSi Heusler alloy films epitaxially grown by molecular beam epitaxy. The fourfold symmetric AMR was observed in the temperature range of 25-275 K. In addition, the films exhibited a marked change in twofold symmetric AMR below 100 K. This specific temperature dependence of the AMR effect in Co2MnSi films can be caused by the tetragonal crystal field because of the distortion of the lattice at low temperatures. The influence of tetragonal distortion on both the AMR effect and half-metallicity is also discussed by first-principles calculations.
AB - In this study, we systematically investigated the anisotropic magnetoresistance (AMR) effect in half-metallic Co2MnSi Heusler alloy films epitaxially grown by molecular beam epitaxy. The fourfold symmetric AMR was observed in the temperature range of 25-275 K. In addition, the films exhibited a marked change in twofold symmetric AMR below 100 K. This specific temperature dependence of the AMR effect in Co2MnSi films can be caused by the tetragonal crystal field because of the distortion of the lattice at low temperatures. The influence of tetragonal distortion on both the AMR effect and half-metallicity is also discussed by first-principles calculations.
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U2 - 10.7567/JJAP.57.063001
DO - 10.7567/JJAP.57.063001
M3 - Article
AN - SCOPUS:85047895850
SN - 0021-4922
VL - 57
JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
IS - 6
M1 - 063001
ER -