TY - JOUR
T1 - Free Carrier Profile Synthesis in MOCVD Grown GaAs by `Atomic-Plane' Doping
AU - Ohno, Hideo
AU - Ikeda, Eiji
AU - Hasegawa, Hideki
PY - 1984/6
Y1 - 1984/6
N2 - Synthesis of free carrier profiles in GaAs by metalorganic chemical vapor deposition is realized by `atomic-plane' doping, in which growth is suspended while doping gas is introduced. Silicon, which stays on the surface even without GaAs growth, is used as a dopant for the `atomic-plane' doping.
AB - Synthesis of free carrier profiles in GaAs by metalorganic chemical vapor deposition is realized by `atomic-plane' doping, in which growth is suspended while doping gas is introduced. Silicon, which stays on the surface even without GaAs growth, is used as a dopant for the `atomic-plane' doping.
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U2 - 10.1143/JJAP.23.L369
DO - 10.1143/JJAP.23.L369
M3 - Article
AN - SCOPUS:0021450813
SN - 0021-4922
VL - 23
SP - L369-L370
JO - Japanese Journal of Applied Physics
JF - Japanese Journal of Applied Physics
IS - 6
ER -