TY - JOUR
T1 - Free-layer size dependence of anisotropy field in nanoscale CoFeB/MgO magnetic tunnel junctions
AU - Shinozaki, Motoya
AU - Igarashi, Junta
AU - Sato, Hideo
AU - Ohno, Hideo
N1 - Funding Information:
Acknowledgments The authors thank F. Matsukura, S. Fukami, A. Okada, T. Dohi, J. Llandro, T. Hirata, H. Iwanuma, K. Goto, and C. Igarashi for their technical supports and discussions. This work was supported in part by the R&D Project for ICT Key Technology of MEXT, ImPACT program of CSTI, and JST-OPERA. J.I. acknowledges the support from GP-Spin.
Publisher Copyright:
© 2018 The Japan Society of Applied Physics.
PY - 2018/4
Y1 - 2018/4
N2 - We investigate free-layer size D dependence of effective anisotropy field in nanoscale CoFeB/MgO magnetic tunnel junctions by homodynedetected ferromagnetic resonance. The effective anisotropy field HeffK monotonically increases with decreasing D for a device with the referencelayer size much larger than the free-layer size. In contrast, HeffK does not increase in a monotonic manner for a device with the reference-layer size comparable to the free-layer size. We reveal that the difference can be explained by the variation of the anisotropy field in the vicinity of the device edge.
AB - We investigate free-layer size D dependence of effective anisotropy field in nanoscale CoFeB/MgO magnetic tunnel junctions by homodynedetected ferromagnetic resonance. The effective anisotropy field HeffK monotonically increases with decreasing D for a device with the referencelayer size much larger than the free-layer size. In contrast, HeffK does not increase in a monotonic manner for a device with the reference-layer size comparable to the free-layer size. We reveal that the difference can be explained by the variation of the anisotropy field in the vicinity of the device edge.
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U2 - 10.7567/APEX.11.043001
DO - 10.7567/APEX.11.043001
M3 - Article
AN - SCOPUS:85044921046
SN - 1882-0778
VL - 11
JO - Applied Physics Express
JF - Applied Physics Express
IS - 4
M1 - 043001
ER -