Free-standing GaN wafer by one-stop HVPE with pit-induced buffer layer

Tadashige Sato; Shinya Okano; Takenari Goto; Takafumi Yao; Akira Sato; Hideki Goto

doi:10.1002/pssc.201200535

Free-standing GaN wafer by one-stop HVPE with pit-induced buffer layer

Tadashige Sato, Shinya Okano, Takenari Goto, Takafumi Yao, Akira Sato, Hideki Goto

IMR - Institute for Materials Research (institute affiliation only)

Research output: Contribution to journal › Article › peer-review

1 Citation (Scopus)

Abstract

We have succeeded in the fabrication of a 2-inch dia free-standing GaN thick wafer by one-stop hydride vapor phase epitaxy using pit-induced buffer layer. High temperature grown GaN layer on the pit-induced layer was grown with numerous inverse-pyramidal pits on the surface. A thick GaN film was separated from the sapphire substrate during cooling. The X-ray rocking curves show the full width at half maximum values of 146 and 152 arcsec for (0002) and (10-12) reflections, respectively. (© 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)

Original language	English
Pages (from-to)	359-361
Number of pages	3
Journal	Physica Status Solidi (C) Current Topics in Solid State Physics
Volume	10
Issue number	3
DOIs	https://doi.org/10.1002/pssc.201200535
Publication status	Published - 2013 Mar

Keywords

Free-standing
GaN
HVPE
Pit
Sapphire

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10.1002/pssc.201200535

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title = "Free-standing GaN wafer by one-stop HVPE with pit-induced buffer layer",

abstract = "We have succeeded in the fabrication of a 2-inch dia free-standing GaN thick wafer by one-stop hydride vapor phase epitaxy using pit-induced buffer layer. High temperature grown GaN layer on the pit-induced layer was grown with numerous inverse-pyramidal pits on the surface. A thick GaN film was separated from the sapphire substrate during cooling. The X-ray rocking curves show the full width at half maximum values of 146 and 152 arcsec for (0002) and (10-12) reflections, respectively. ({\textcopyright} 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)",

keywords = "Free-standing, GaN, HVPE, Pit, Sapphire",

author = "Tadashige Sato and Shinya Okano and Takenari Goto and Takafumi Yao and Akira Sato and Hideki Goto",

year = "2013",

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doi = "10.1002/pssc.201200535",

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T1 - Free-standing GaN wafer by one-stop HVPE with pit-induced buffer layer

AU - Sato, Tadashige

AU - Okano, Shinya

AU - Goto, Takenari

AU - Yao, Takafumi

AU - Sato, Akira

AU - Goto, Hideki

PY - 2013/3

Y1 - 2013/3

N2 - We have succeeded in the fabrication of a 2-inch dia free-standing GaN thick wafer by one-stop hydride vapor phase epitaxy using pit-induced buffer layer. High temperature grown GaN layer on the pit-induced layer was grown with numerous inverse-pyramidal pits on the surface. A thick GaN film was separated from the sapphire substrate during cooling. The X-ray rocking curves show the full width at half maximum values of 146 and 152 arcsec for (0002) and (10-12) reflections, respectively. (© 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)

AB - We have succeeded in the fabrication of a 2-inch dia free-standing GaN thick wafer by one-stop hydride vapor phase epitaxy using pit-induced buffer layer. High temperature grown GaN layer on the pit-induced layer was grown with numerous inverse-pyramidal pits on the surface. A thick GaN film was separated from the sapphire substrate during cooling. The X-ray rocking curves show the full width at half maximum values of 146 and 152 arcsec for (0002) and (10-12) reflections, respectively. (© 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)

KW - Free-standing

KW - GaN

KW - HVPE

KW - Pit

KW - Sapphire

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JF - Physica Status Solidi (C) Current Topics in Solid State Physics

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ER -

Free-standing GaN wafer by one-stop HVPE with pit-induced buffer layer

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Keywords

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