Free-standing GaN wafer by one-stop HVPE with pit-induced buffer layer

Tadashige Sato, Shinya Okano, Takenari Goto, Takafumi Yao, Akira Sato, Hideki Goto

Research output: Contribution to journalArticlepeer-review

1 Citation (Scopus)


We have succeeded in the fabrication of a 2-inch dia free-standing GaN thick wafer by one-stop hydride vapor phase epitaxy using pit-induced buffer layer. High temperature grown GaN layer on the pit-induced layer was grown with numerous inverse-pyramidal pits on the surface. A thick GaN film was separated from the sapphire substrate during cooling. The X-ray rocking curves show the full width at half maximum values of 146 and 152 arcsec for (0002) and (10-12) reflections, respectively. (© 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)

Original languageEnglish
Pages (from-to)359-361
Number of pages3
JournalPhysica Status Solidi (C) Current Topics in Solid State Physics
Issue number3
Publication statusPublished - 2013 Mar


  • Free-standing
  • GaN
  • HVPE
  • Pit
  • Sapphire


Dive into the research topics of 'Free-standing GaN wafer by one-stop HVPE with pit-induced buffer layer'. Together they form a unique fingerprint.

Cite this