Freestanding GaN resonant gratings at telecommunication range

Yongjin Wang, Fangren Hu, Masashi Wakui, Kazuhiro Hane

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12 Citations (Scopus)


We theoretically and experimentally demonstrate a freestanding gallium nitride (GaN) resonant grating at telecommunication range. The optical responses of the freestanding GaN resonant gratings are analyzed by the rigorous coupled-wave analysis method. The freestanding GaN resonant gratings are validated on 850-nm freestanding membrane by a combination of electron beam lithography, fast atom beam, etching, and deep reactive ion etching. The polarization properties of such freestanding GaN resonant gratings are demonstrated in reflectance measurements, and the experimental results correspond well to the theoretical model. The strong resonant peaks show a clear dependence on the duty ratio under transverse magnetic polarization, and a promising resonant peak of the fabricated freestanding GaN resonant grating, in which the grating period P is 1500 nm, the grating height h is 230 nm, and the grating width is 280 nm, is observed at 1516.4 nm with a full-width at half-maximum of 4 nm.

Original languageEnglish
Pages (from-to)1184-1186
Number of pages3
JournalIEEE Photonics Technology Letters
Issue number17
Publication statusPublished - 2009 Sept 1


  • Electron beam lithography
  • Etching
  • Gallium compounds
  • Resonator filters


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