Freestanding GaN slab fabricated on patterned silicon on an insulator substrate

Yongjin Wang, Fangren Hu, Kazuhiro Hane

Research output: Contribution to journalArticlepeer-review

2 Citations (Scopus)


We propose the growth of GaN on patterned silicon-on-insulator (SOI) substrates, i.e. the GaN-on-patterned-SOI technique. The selective growth is suppressed at the low temperature molecular beam epitaxy (MBE) growth, and GaN nanocolumn are thus epitaxially grown on a silicon substrate and a silicon oxide substrate. The GaN slabs grown on the silicon oxide substrate are totally suspended in space by an association of bulk silicon micromachining and buffered HF etching. The photoluminescence and the reflection results suggest that silicon absorption of the emitted light is eliminated for the freestanding GaN slab, and the reflection losses are reduced at the GaN nanocolumn surface. This work provides a promising way to combine SOI technology with the growth of GaN for producing new optical devices.

Original languageEnglish
Article number027001
JournalJournal of Micromechanics and Microengineering
Issue number2
Publication statusPublished - 2010 Jan 28

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Mechanics of Materials
  • Mechanical Engineering
  • Electrical and Electronic Engineering


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