Freestanding HfO 2 grating fabricated by fast atom beam etching

Yongjin Wang, Tong Wu, Yoshiaki Kanamori, Kazuhiro Hane

Research output: Contribution to journalArticlepeer-review

17 Citations (Scopus)


We report here the fabrication of freestanding HfO 2 grating by combining fast atom beam etching (FAB) of HfO 2 film with dry etching of silicon substrate. HfO 2 film is deposited onto silicon substrate by electron beam evaporator. The grating patterns are then defined by electron beam lithography and transferred to HfO 2 film by FAB etching. The silicon substrate beneath the HfO 2 grating region is removed to make the HfO 2 grating suspend in space. Period- and polarization-dependent optical responses of fabricated HfO 2 gratings are experimentally characterized in the reflectance measurements. The simple process is feasible for fabricating freestanding HfO 2 grating that is a potential candidate for single layer dielectric reflector.

Original languageEnglish
Article number367
Pages (from-to)1-5
Number of pages5
JournalNanoscale Research Letters
Publication statusPublished - 2011


  • Fast atom beam etching
  • HfO film grating


Dive into the research topics of 'Freestanding HfO 2 grating fabricated by fast atom beam etching'. Together they form a unique fingerprint.

Cite this