Freestanding HfO 2 grating fabricated by fast atom beam etching

Yongjin Wang; Tong Wu; Yoshiaki Kanamori; Kazuhiro Hane

doi:10.1186/1556-276X-6-367

Freestanding HfO ₂ grating fabricated by fast atom beam etching

Yongjin Wang, Tong Wu, Yoshiaki Kanamori, Kazuhiro Hane

Research output: Contribution to journal › Article › peer-review

17 Citations (Scopus)

Abstract

We report here the fabrication of freestanding HfO ₂ grating by combining fast atom beam etching (FAB) of HfO ₂ film with dry etching of silicon substrate. HfO ₂ film is deposited onto silicon substrate by electron beam evaporator. The grating patterns are then defined by electron beam lithography and transferred to HfO ₂ film by FAB etching. The silicon substrate beneath the HfO ₂ grating region is removed to make the HfO ₂ grating suspend in space. Period- and polarization-dependent optical responses of fabricated HfO ₂ gratings are experimentally characterized in the reflectance measurements. The simple process is feasible for fabricating freestanding HfO ₂ grating that is a potential candidate for single layer dielectric reflector.

Original language	English
Article number	367
Pages (from-to)	1-5
Number of pages	5
Journal	Nanoscale Research Letters
Volume	6
DOIs	https://doi.org/10.1186/1556-276X-6-367
Publication status	Published - 2011

Keywords

Fast atom beam etching
HfO film grating

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10.1186/1556-276X-6-367

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title = "Freestanding HfO 2 grating fabricated by fast atom beam etching",

abstract = "We report here the fabrication of freestanding HfO 2 grating by combining fast atom beam etching (FAB) of HfO 2 film with dry etching of silicon substrate. HfO 2 film is deposited onto silicon substrate by electron beam evaporator. The grating patterns are then defined by electron beam lithography and transferred to HfO 2 film by FAB etching. The silicon substrate beneath the HfO 2 grating region is removed to make the HfO 2 grating suspend in space. Period- and polarization-dependent optical responses of fabricated HfO 2 gratings are experimentally characterized in the reflectance measurements. The simple process is feasible for fabricating freestanding HfO 2 grating that is a potential candidate for single layer dielectric reflector.",

keywords = "Fast atom beam etching, HfO film grating",

author = "Yongjin Wang and Tong Wu and Yoshiaki Kanamori and Kazuhiro Hane",

note = "Funding Information: This work was partially supported by the JSPS Research Project (19106007 and P09070) and NJUPT Research Project (NY211001).",

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doi = "10.1186/1556-276X-6-367",

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journal = "Nanoscale Research Letters",

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T1 - Freestanding HfO 2 grating fabricated by fast atom beam etching

AU - Wang, Yongjin

AU - Wu, Tong

AU - Kanamori, Yoshiaki

AU - Hane, Kazuhiro

N1 - Funding Information: This work was partially supported by the JSPS Research Project (19106007 and P09070) and NJUPT Research Project (NY211001).

PY - 2011

Y1 - 2011

N2 - We report here the fabrication of freestanding HfO 2 grating by combining fast atom beam etching (FAB) of HfO 2 film with dry etching of silicon substrate. HfO 2 film is deposited onto silicon substrate by electron beam evaporator. The grating patterns are then defined by electron beam lithography and transferred to HfO 2 film by FAB etching. The silicon substrate beneath the HfO 2 grating region is removed to make the HfO 2 grating suspend in space. Period- and polarization-dependent optical responses of fabricated HfO 2 gratings are experimentally characterized in the reflectance measurements. The simple process is feasible for fabricating freestanding HfO 2 grating that is a potential candidate for single layer dielectric reflector.

AB - We report here the fabrication of freestanding HfO 2 grating by combining fast atom beam etching (FAB) of HfO 2 film with dry etching of silicon substrate. HfO 2 film is deposited onto silicon substrate by electron beam evaporator. The grating patterns are then defined by electron beam lithography and transferred to HfO 2 film by FAB etching. The silicon substrate beneath the HfO 2 grating region is removed to make the HfO 2 grating suspend in space. Period- and polarization-dependent optical responses of fabricated HfO 2 gratings are experimentally characterized in the reflectance measurements. The simple process is feasible for fabricating freestanding HfO 2 grating that is a potential candidate for single layer dielectric reflector.

KW - Fast atom beam etching

KW - HfO film grating

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Freestanding HfO ₂ grating fabricated by fast atom beam etching

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