@inproceedings{9ed0e547c20f43d08147f5a48ec9298a,
title = "Frequency performance of plasma wave devices for thz applications and the role of fringing effects",
abstract = "Paper is focused on the model in which reduction of resonant frequency of plasma oscillations in the HEMT channel experimentally observed is associated with the gate contact fringing effects. Sheet electron density distribution in the fringed ungated channel region and expression for the resonant plasma frequency are obtained. Cascaded transmission line equivalent circuit model accounting for both gated and fringed ungated channel regions has been developed and used for simulation of HEMT frequency performance with IsSpice software.",
keywords = "Cascaded TL model, Fringing effects, HEMT, Plasma oscillations, Resonant frequency",
author = "Irina Khmyrova and Takuya Nishimura and Nobuhiro Magome and Tetsuya Suemitsu and Taiichi Otsuji",
year = "2008",
month = dec,
day = "1",
doi = "10.1109/EEEI.2008.4736613",
language = "English",
isbn = "9781424424825",
series = "IEEE Convention of Electrical and Electronics Engineers in Israel, Proceedings",
pages = "650--653",
booktitle = "2008 IEEE 25th Convention of Electrical and Electronics Engineers in Israel, IEEEI 2008",
note = "2008 IEEE 25th Convention of Electrical and Electronics Engineers in Israel, IEEEI 2008 ; Conference date: 03-12-2008 Through 05-12-2008",
}