TY - JOUR
T1 - Frustrated Lewis Pair Chelation as a Vehicle for Low-Temperature Semiconductor Element and Polymer Deposition
AU - Omaña, Alvaro A.
AU - Green, Rachel K.
AU - Kobayashi, Ryo
AU - He, Yingjie
AU - Antoniuk, Evan R.
AU - Ferguson, Michael J.
AU - Zhou, Yuqiao
AU - Veinot, Jonathan G.C.
AU - Iwamoto, Takeaki
AU - Brown, Alex
AU - Rivard, Eric
N1 - Funding Information:
E.R., A.B., J.G.C.V., and E.R.A. thank NSERC of Canada for Discovery, Accelerator Supplement (E.R.), USRA (E.R.A), and/or CREATE (J.G.C.V.) grants. E.R. also thanks the Canada Foundation for Innovation and the Faculty of Science at the University of Alberta. The authors thank Compute/Calcul Canada for access to computational resources. A.A.O. thanks Dr. Emanuel Hupf and Dr. Matthew M. D. Roy for helpful comments and Taylor Lynk for Raman data.
Funding Information:
E.R., A.B., J.G.C.V., and E.R.A. thank NSERC of Canada for Discovery, Accelerator Supplement (E.R.), USRA (E.R.A), and/or CREATE (J.G.C.V.) grants. E.R. also thanks the Canada Foundation for Innovation and the Faculty of Science at the University of Alberta. The authors thank Compute/Calcul Canada for access to computational resources. A.A.O. thanks Dr. Emanuel Hupf and Dr. Matthew M. D. Roy for helpful comments and Taylor Lynk for Raman data.
Publisher Copyright:
© 2020 Wiley-VCH GmbH
PY - 2021/1/4
Y1 - 2021/1/4
N2 - The stabilization of silicon(II) and germanium(II) dihydrides by an intramolecular Frustrated Lewis Pair (FLP) ligand, PB, iPr2P(C6H4)BCy2 (Cy=cyclohexyl) is reported. The resulting hydride complexes [PB{SiH2}] and [PB{GeH2}] are indefinitely stable at room temperature, yet can deposit films of silicon and germanium, respectively, upon mild thermolysis in solution. Hallmarks of this work include: 1) the ability to recycle the FLP phosphine-borane ligand (PB) after element deposition, and 2) the single-source precursor [PB{SiH2}] deposits Si films at a record low temperature from solution (110 °C). The dialkylsilicon(II) adduct [PB{SiMe2}] was also prepared, and shown to release poly(dimethylsilane) [SiMe2]n upon heating. Overall, this study introduces a “closed loop” deposition strategy for semiconductors that steers materials science away from the use of harsh reagents or high temperatures.
AB - The stabilization of silicon(II) and germanium(II) dihydrides by an intramolecular Frustrated Lewis Pair (FLP) ligand, PB, iPr2P(C6H4)BCy2 (Cy=cyclohexyl) is reported. The resulting hydride complexes [PB{SiH2}] and [PB{GeH2}] are indefinitely stable at room temperature, yet can deposit films of silicon and germanium, respectively, upon mild thermolysis in solution. Hallmarks of this work include: 1) the ability to recycle the FLP phosphine-borane ligand (PB) after element deposition, and 2) the single-source precursor [PB{SiH2}] deposits Si films at a record low temperature from solution (110 °C). The dialkylsilicon(II) adduct [PB{SiMe2}] was also prepared, and shown to release poly(dimethylsilane) [SiMe2]n upon heating. Overall, this study introduces a “closed loop” deposition strategy for semiconductors that steers materials science away from the use of harsh reagents or high temperatures.
KW - element deposition
KW - frustrated Lewis pairs
KW - group 14 elements
KW - hydrides
KW - inorganic bonding
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U2 - 10.1002/anie.202012218
DO - 10.1002/anie.202012218
M3 - Article
C2 - 32960472
AN - SCOPUS:85093976631
SN - 1433-7851
VL - 60
SP - 228
EP - 231
JO - Angewandte Chemie - International Edition
JF - Angewandte Chemie - International Edition
IS - 1
ER -