FTIR-ATR, AFM, and UHV-STM characterization of the interface of SiO                         2                         /Si(001) induced by thick SiO                         2                          formation

Kenji Namba; Tadahiro Komeda; Yasushiro Nishioka

doi:10.1016/S0169-4332(97)80078-5

FTIR-ATR, AFM, and UHV-STM characterization of the interface of SiO ₂ /Si(001) induced by thick SiO ₂ formation

Kenji Namba, Tadahiro Komeda, Yasushiro Nishioka

IMRAM - Division of Measurements

Texas Instruments

Research output: Contribution to journal › Article › peer-review

4 Citations (Scopus)

Abstract

Ultrahigh vacuum type scanning tunnelling microscopic (UHV-STM) and atomic force microscopic (AFM) measurements showed the existence of long periodical mound and valley shape (∼ 1 μm-period, ∼ 1.5 nm-height) at SiO ₂ /Si(001) interface after removing native oxide. This shape was observed at the interface even after the formation of a thick (∼ 150 nm) thermal oxide or a chemical oxide made in HNO ₃ solution. Fourier transform infrared spectroscopic (FTIR) measurements of the interfaces indicated the atomic scale roughness of the interface.

Original language	English
Pages (from-to)	198-201
Number of pages	4
Journal	Applied Surface Science
Volume	117-118
DOIs	https://doi.org/10.1016/S0169-4332(97)80078-5
Publication status	Published - 1997 Jun 2

Keywords

FTIR
Microroughness
Sacrificing oxidation
Si(001)
Step structures
STM

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10.1016/S0169-4332(97)80078-5

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Namba, K., Komeda, T., & Nishioka, Y. (1997). FTIR-ATR, AFM, and UHV-STM characterization of the interface of SiO ₂ /Si(001) induced by thick SiO ₂ formation Applied Surface Science, 117-118, 198-201. https://doi.org/10.1016/S0169-4332(97)80078-5

Namba, Kenji ; Komeda, Tadahiro ; Nishioka, Yasushiro. / FTIR-ATR, AFM, and UHV-STM characterization of the interface of SiO ₂ /Si(001) induced by thick SiO ₂ formation In: Applied Surface Science. 1997 ; Vol. 117-118. pp. 198-201.

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title = " FTIR-ATR, AFM, and UHV-STM characterization of the interface of SiO 2 /Si(001) induced by thick SiO 2 formation ",

abstract = " Ultrahigh vacuum type scanning tunnelling microscopic (UHV-STM) and atomic force microscopic (AFM) measurements showed the existence of long periodical mound and valley shape (∼ 1 μm-period, ∼ 1.5 nm-height) at SiO 2 /Si(001) interface after removing native oxide. This shape was observed at the interface even after the formation of a thick (∼ 150 nm) thermal oxide or a chemical oxide made in HNO 3 solution. Fourier transform infrared spectroscopic (FTIR) measurements of the interfaces indicated the atomic scale roughness of the interface. ",

keywords = "FTIR, Microroughness, Sacrificing oxidation, Si(001), Step structures, STM",

author = "Kenji Namba and Tadahiro Komeda and Yasushiro Nishioka",

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Namba, K, Komeda, T & Nishioka, Y 1997, ' FTIR-ATR, AFM, and UHV-STM characterization of the interface of SiO ₂ /Si(001) induced by thick SiO ₂ formation ', Applied Surface Science, vol. 117-118, pp. 198-201. https://doi.org/10.1016/S0169-4332(97)80078-5

FTIR-ATR, AFM, and UHV-STM characterization of the interface of SiO ₂ /Si(001) induced by thick SiO ₂ formation . / Namba, Kenji; Komeda, Tadahiro; Nishioka, Yasushiro.
In: Applied Surface Science, Vol. 117-118, 02.06.1997, p. 198-201.

Research output: Contribution to journal › Article › peer-review

TY - JOUR

T1 - FTIR-ATR, AFM, and UHV-STM characterization of the interface of SiO 2 /Si(001) induced by thick SiO 2 formation

AU - Namba, Kenji

AU - Komeda, Tadahiro

AU - Nishioka, Yasushiro

PY - 1997/6/2

Y1 - 1997/6/2

N2 - Ultrahigh vacuum type scanning tunnelling microscopic (UHV-STM) and atomic force microscopic (AFM) measurements showed the existence of long periodical mound and valley shape (∼ 1 μm-period, ∼ 1.5 nm-height) at SiO 2 /Si(001) interface after removing native oxide. This shape was observed at the interface even after the formation of a thick (∼ 150 nm) thermal oxide or a chemical oxide made in HNO 3 solution. Fourier transform infrared spectroscopic (FTIR) measurements of the interfaces indicated the atomic scale roughness of the interface.

AB - Ultrahigh vacuum type scanning tunnelling microscopic (UHV-STM) and atomic force microscopic (AFM) measurements showed the existence of long periodical mound and valley shape (∼ 1 μm-period, ∼ 1.5 nm-height) at SiO 2 /Si(001) interface after removing native oxide. This shape was observed at the interface even after the formation of a thick (∼ 150 nm) thermal oxide or a chemical oxide made in HNO 3 solution. Fourier transform infrared spectroscopic (FTIR) measurements of the interfaces indicated the atomic scale roughness of the interface.

KW - FTIR

KW - Microroughness

KW - Sacrificing oxidation

KW - Si(001)

KW - Step structures

KW - STM

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SN - 0169-4332

VL - 117-118

SP - 198

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JO - Applied Surface Science

JF - Applied Surface Science

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Namba K, Komeda T, Nishioka Y. FTIR-ATR, AFM, and UHV-STM characterization of the interface of SiO ₂ /Si(001) induced by thick SiO ₂ formation Applied Surface Science. 1997 Jun 2;117-118:198-201. doi: 10.1016/S0169-4332(97)80078-5

FTIR-ATR, AFM, and UHV-STM characterization of the interface of SiO ₂ /Si(001) induced by thick SiO ₂ formation

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Keywords

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