Full compensation of oxygen vacancies in EuTiO3 (001) epitaxial thin film stabilized by a SrTiO3 surface protection layer

K. Shimamoto; K. Hatabayashi; Y. Hirose; S. Nakao; T. Fukumura; T. Hasegawa

doi:10.1063/1.4789778

Full compensation of oxygen vacancies in EuTiO₃ (001) epitaxial thin film stabilized by a SrTiO₃ surface protection layer

K. Shimamoto, K. Hatabayashi, Y. Hirose, S. Nakao, T. Fukumura, T. Hasegawa

SCI - Chemistry

Research output: Contribution to journal › Article › peer-review

19 Citations (Scopus)

Abstract

We fabricated highly insulating EuTiO₃ (001) epitaxial thin films capped with SrTiO₃ protection layers on SrTiO₃ (001) substrates by combining pulsed laser deposition and post-annealing processes. The epitaxial SrTiO₃ protection layer played a significant role in compensation of oxygen vacancies in the EuTiO₃ thin films by preventing excess oxidation of the films and by "locking" the EuTiO₃ perovskite structure in an epitaxial manner from the top during the air-annealing process. The obtained EuTiO₃ thin films demonstrated an antiferromagnetic transition at 5.4 K, quantum paraelectricity down to ∼25 K, and a magnetoelectric coupling comparable to that of bulk EuTiO₃.

Original language	English
Article number	042902
Journal	Applied Physics Letters
Volume	102
Issue number	4
DOIs	https://doi.org/10.1063/1.4789778
Publication status	Published - 2013 Jan 28

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AU - Shimamoto, K.

AU - Hatabayashi, K.

AU - Hirose, Y.

AU - Nakao, S.

AU - Fukumura, T.

AU - Hasegawa, T.

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Y1 - 2013/1/28

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AB - We fabricated highly insulating EuTiO3 (001) epitaxial thin films capped with SrTiO3 protection layers on SrTiO3 (001) substrates by combining pulsed laser deposition and post-annealing processes. The epitaxial SrTiO3 protection layer played a significant role in compensation of oxygen vacancies in the EuTiO3 thin films by preventing excess oxidation of the films and by "locking" the EuTiO3 perovskite structure in an epitaxial manner from the top during the air-annealing process. The obtained EuTiO3 thin films demonstrated an antiferromagnetic transition at 5.4 K, quantum paraelectricity down to ∼25 K, and a magnetoelectric coupling comparable to that of bulk EuTiO3.

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Full compensation of oxygen vacancies in EuTiO₃ (001) epitaxial thin film stabilized by a SrTiO₃ surface protection layer

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