TY - GEN
T1 - Fully CMOS-Compatible Wafer Bonding Based on Press Marking Using Thick Electroplated Aluminum
AU - Al Farisi, Muhammad Salman
AU - Tsukamoto, Takashiro
AU - Tanaka, Shuji
N1 - Funding Information:
This study was supported by " Japan Society # for ! the Promotion of !Science # # (JSPS) % ( KAKENHI L L9 * grant-in-aid < < for ! young scientists # no. )19Jl D 1122 and the Division 8 for ! Interdisciplinary * # Advanced # Research A # and Education, 9 # )
Publisher Copyright:
© 2021 IEEE.
PY - 2021/6/20
Y1 - 2021/6/20
N2 - Aluminum has a great potential as a wafer bonding material due to its inherent compatibility with the complimentary metal oxide semiconductor (CMOS) processes. In this study, a novel wafer bonding technique for heterogeneous integration using electroplated Al bonding frame is demonstrated for the first time. The Al frames were deposited by electroplating from a chloroaluminate ionic liquid. The electroplated Al bonding frames were mechanically deformed by the groove structures on the counter wafer, i.e. press marking. Such a large mechanical deformation enabled the wafer bonding at a temperature of as low as 250°C, which is the lowest value that has ever been reported for the Al bonding. The influence of the bonding temperature to the quality of the bonded substrates were evaluated. The bonding shear strength of 8-100 MPa was obtained, which is in par with the other established techniques.
AB - Aluminum has a great potential as a wafer bonding material due to its inherent compatibility with the complimentary metal oxide semiconductor (CMOS) processes. In this study, a novel wafer bonding technique for heterogeneous integration using electroplated Al bonding frame is demonstrated for the first time. The Al frames were deposited by electroplating from a chloroaluminate ionic liquid. The electroplated Al bonding frames were mechanically deformed by the groove structures on the counter wafer, i.e. press marking. Such a large mechanical deformation enabled the wafer bonding at a temperature of as low as 250°C, which is the lowest value that has ever been reported for the Al bonding. The influence of the bonding temperature to the quality of the bonded substrates were evaluated. The bonding shear strength of 8-100 MPa was obtained, which is in par with the other established techniques.
KW - aluminum
KW - electroplating
KW - press marking
KW - Wafer bonding
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U2 - 10.1109/Transducers50396.2021.9495544
DO - 10.1109/Transducers50396.2021.9495544
M3 - Conference contribution
AN - SCOPUS:85114965972
T3 - 21st International Conference on Solid-State Sensors, Actuators and Microsystems, TRANSDUCERS 2021
SP - 1138
EP - 1141
BT - 21st International Conference on Solid-State Sensors, Actuators and Microsystems, TRANSDUCERS 2021
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 21st International Conference on Solid-State Sensors, Actuators and Microsystems, TRANSDUCERS 2021
Y2 - 20 June 2021 through 25 June 2021
ER -