Fully parallel 6T-2MTJ nonvolatile TCAM with single-transistor-based self match-line discharge control

Shoun Matsunaga; Akira Katsumata; Masanori Natsui; Shunsuke Fukami; Tetsuo Endoh; Hideo Ohno; Takahiro Hanyu

Fully parallel 6T-2MTJ nonvolatile TCAM with single-transistor-based self match-line discharge control

Shoun Matsunaga, Akira Katsumata, Masanori Natsui, Shunsuke Fukami, Tetsuo Endoh, Hideo Ohno, Takahiro Hanyu

Tohoku University

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

63 Citations (Scopus)

Abstract

A six-MOS-transistor/two-MTJ-device (6T-2MTJ)-based cell circuit with an autonomous leakage-current control mechanism is proposed and fabricated for a fully parallel nonvolatile TCAM. A diode-connected nMOS transistor is inserted into each cell for match-line discharge control, which enables bit-parallel equality-search operation more than 144 bits. Since each match line is divided into three segments, the activity rate of cells is reduced to 2.8%. This almost eliminates leakage power while maintaining comparable search energy of 1.04 fJ/bit/search in comparison with a CMOS-based TCAM.

Original language	English
Title of host publication	2011 Symposium on VLSI Circuits, VLSIC 2011 - Digest of Technical Papers
Pages	298-299
Number of pages	2
Publication status	Published - 2011
Event	2011 Symposium on VLSI Circuits, VLSIC 2011 - Kyoto, Japan Duration: 2011 Jun 15 → 2011 Jun 17

Publication series

Name	IEEE Symposium on VLSI Circuits, Digest of Technical Papers

Conference

Conference	2011 Symposium on VLSI Circuits, VLSIC 2011
Country/Territory	Japan
City	Kyoto
Period	11/6/15 → 11/6/17

Cite this

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title = "Fully parallel 6T-2MTJ nonvolatile TCAM with single-transistor-based self match-line discharge control",

abstract = "A six-MOS-transistor/two-MTJ-device (6T-2MTJ)-based cell circuit with an autonomous leakage-current control mechanism is proposed and fabricated for a fully parallel nonvolatile TCAM. A diode-connected nMOS transistor is inserted into each cell for match-line discharge control, which enables bit-parallel equality-search operation more than 144 bits. Since each match line is divided into three segments, the activity rate of cells is reduced to 2.8%. This almost eliminates leakage power while maintaining comparable search energy of 1.04 fJ/bit/search in comparison with a CMOS-based TCAM.",

author = "Shoun Matsunaga and Akira Katsumata and Masanori Natsui and Shunsuke Fukami and Tetsuo Endoh and Hideo Ohno and Takahiro Hanyu",

year = "2011",

language = "English",

isbn = "9784863481657",

series = "IEEE Symposium on VLSI Circuits, Digest of Technical Papers",

pages = "298--299",

booktitle = "2011 Symposium on VLSI Circuits, VLSIC 2011 - Digest of Technical Papers",

note = "2011 Symposium on VLSI Circuits, VLSIC 2011 ; Conference date: 15-06-2011 Through 17-06-2011",

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Matsunaga, S, Katsumata, A, Natsui, M , Fukami, S , Endoh, T , Ohno, H & Hanyu, T 2011, Fully parallel 6T-2MTJ nonvolatile TCAM with single-transistor-based self match-line discharge control. in 2011 Symposium on VLSI Circuits, VLSIC 2011 - Digest of Technical Papers., 5986429, IEEE Symposium on VLSI Circuits, Digest of Technical Papers, pp. 298-299, 2011 Symposium on VLSI Circuits, VLSIC 2011, Kyoto, Japan, 11/6/15.

Fully parallel 6T-2MTJ nonvolatile TCAM with single-transistor-based self match-line discharge control. / Matsunaga, Shoun; Katsumata, Akira; Natsui, Masanori et al.
2011 Symposium on VLSI Circuits, VLSIC 2011 - Digest of Technical Papers. 2011. p. 298-299 5986429 (IEEE Symposium on VLSI Circuits, Digest of Technical Papers).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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T1 - Fully parallel 6T-2MTJ nonvolatile TCAM with single-transistor-based self match-line discharge control

AU - Matsunaga, Shoun

AU - Katsumata, Akira

AU - Natsui, Masanori

AU - Fukami, Shunsuke

AU - Endoh, Tetsuo

AU - Ohno, Hideo

AU - Hanyu, Takahiro

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N2 - A six-MOS-transistor/two-MTJ-device (6T-2MTJ)-based cell circuit with an autonomous leakage-current control mechanism is proposed and fabricated for a fully parallel nonvolatile TCAM. A diode-connected nMOS transistor is inserted into each cell for match-line discharge control, which enables bit-parallel equality-search operation more than 144 bits. Since each match line is divided into three segments, the activity rate of cells is reduced to 2.8%. This almost eliminates leakage power while maintaining comparable search energy of 1.04 fJ/bit/search in comparison with a CMOS-based TCAM.

AB - A six-MOS-transistor/two-MTJ-device (6T-2MTJ)-based cell circuit with an autonomous leakage-current control mechanism is proposed and fabricated for a fully parallel nonvolatile TCAM. A diode-connected nMOS transistor is inserted into each cell for match-line discharge control, which enables bit-parallel equality-search operation more than 144 bits. Since each match line is divided into three segments, the activity rate of cells is reduced to 2.8%. This almost eliminates leakage power while maintaining comparable search energy of 1.04 fJ/bit/search in comparison with a CMOS-based TCAM.

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BT - 2011 Symposium on VLSI Circuits, VLSIC 2011 - Digest of Technical Papers

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Fully parallel 6T-2MTJ nonvolatile TCAM with single-transistor-based self match-line discharge control

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