TY - JOUR
T1 - Functionally separated, multiple-valued content-addressable memory and its applications
AU - Hanyu, T.
AU - Aragaki, S.
AU - Higuchi, T.
PY - 1995/6
Y1 - 1995/6
N2 - A design of a high-density multiple-valued content-addressable memory (MVCAM) is presented. The key concept of the proposed MVCAM is a functionally separated configuration in which the cell functions are split into two basic parts: a threshold function and logic-value conversion. Complicated search operations are synthesised by the combination of these two basic functions. The circuit for logic-value conversion is designed by a binary-to-multiple-valued encoder as a peripheral circuit. Input data are encoded by the logic-value conversion and are distributed to each CAM cell. A CAM cell for performing the threshold function is simply designed using one floating-gate MOS transistor. Separating the complex search operations into the threshold function and the logic-value conversion, a simple CAM cell can be achieved. As a result, it is estimated that a 1 Mbit four-valued CAM can be implemented using conventional flash EEPROM technologies and is useful in two typical applications.
AB - A design of a high-density multiple-valued content-addressable memory (MVCAM) is presented. The key concept of the proposed MVCAM is a functionally separated configuration in which the cell functions are split into two basic parts: a threshold function and logic-value conversion. Complicated search operations are synthesised by the combination of these two basic functions. The circuit for logic-value conversion is designed by a binary-to-multiple-valued encoder as a peripheral circuit. Input data are encoded by the logic-value conversion and are distributed to each CAM cell. A CAM cell for performing the threshold function is simply designed using one floating-gate MOS transistor. Separating the complex search operations into the threshold function and the logic-value conversion, a simple CAM cell can be achieved. As a result, it is estimated that a 1 Mbit four-valued CAM can be implemented using conventional flash EEPROM technologies and is useful in two typical applications.
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U2 - 10.1049/ip-cds:19951949
DO - 10.1049/ip-cds:19951949
M3 - Article
AN - SCOPUS:0029322860
SN - 1350-2409
VL - 142
SP - 165
EP - 172
JO - IEE Proceedings: Circuits, Devices and Systems
JF - IEE Proceedings: Circuits, Devices and Systems
IS - 3
ER -