Future high density memory with vertical structured device technology

Tetsuo Endoh

doi:10.1109/ICSICT.2010.5667541

Future high density memory with vertical structured device technology

Tetsuo Endoh

ENG - Electrical Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

For the past thirty years, the downscaling has been the guiding principle in the field of High-density semiconductor memories. However, recently, the limit of planar bulk MOSFETs is becoming apparent. Therefore, in order to extend the scalability of memory technology to the nano-scale generation, a new device structure is necessary. From the viewpoint, I will discuss future High density Memory with Vertical structured device technology.

Original language	English
Title of host publication	ICSICT-2010 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings
Pages	1051-1054
Number of pages	4
DOIs	https://doi.org/10.1109/ICSICT.2010.5667541
Publication status	Published - 2010
Event	2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology - Shanghai, China Duration: 2010 Nov 1 → 2010 Nov 4

Publication series

Name	ICSICT-2010 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings

Conference

Conference	2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology
Country/Territory	China
City	Shanghai
Period	10/11/1 → 10/11/4

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10.1109/ICSICT.2010.5667541

Cite this

Endoh, T. (2010). Future high density memory with vertical structured device technology. In ICSICT-2010 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings (pp. 1051-1054). Article 5667541 (ICSICT-2010 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings). https://doi.org/10.1109/ICSICT.2010.5667541

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title = "Future high density memory with vertical structured device technology",

abstract = "For the past thirty years, the downscaling has been the guiding principle in the field of High-density semiconductor memories. However, recently, the limit of planar bulk MOSFETs is becoming apparent. Therefore, in order to extend the scalability of memory technology to the nano-scale generation, a new device structure is necessary. From the viewpoint, I will discuss future High density Memory with Vertical structured device technology.",

author = "Tetsuo Endoh",

year = "2010",

doi = "10.1109/ICSICT.2010.5667541",

language = "English",

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pages = "1051--1054",

booktitle = "ICSICT-2010 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings",

note = "2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology ; Conference date: 01-11-2010 Through 04-11-2010",

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Endoh, T 2010, Future high density memory with vertical structured device technology. in ICSICT-2010 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings., 5667541, ICSICT-2010 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings, pp. 1051-1054, 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Shanghai, China, 10/11/1. https://doi.org/10.1109/ICSICT.2010.5667541

Future high density memory with vertical structured device technology. / Endoh, Tetsuo.
ICSICT-2010 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings. 2010. p. 1051-1054 5667541 (ICSICT-2010 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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Endoh T. Future high density memory with vertical structured device technology. In ICSICT-2010 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings. 2010. p. 1051-1054. 5667541. (ICSICT-2010 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings). doi: 10.1109/ICSICT.2010.5667541

Future high density memory with vertical structured device technology

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