Ga-doped ZnO transparent conducting films prepared by helicon-wave-excited plasma sputtering

Shingo Masaki; Hisayuki Nakanishi; Mutsumi Sugiyama; Shigefusa F. Chichibu

doi:10.1002/pssc.200881168

Ga-doped ZnO transparent conducting films prepared by helicon-wave-excited plasma sputtering

Shingo Masaki, Hisayuki Nakanishi, Mutsumi Sugiyama, Shigefusa F. Chichibu

IMRAM - Division of Measurements

Tokyo University of Science

Research output: Contribution to journal › Conference article › peer-review

2 Citations (Scopus)

Abstract

Gallium-doped zinc oxide (ZnO:Ga) transparent conducting films were prepared by the helicon-wave-excited plasma sputtering (HWPS) method. The films exhibited a dominant [0001]-oriented growth with a small full width at half maximum of the (0002) ZnO diffraction peak (0.28 degrees). A high optical transmittance greater than 80% was achieved in the wavelength range between 400 and 1600 nm, because the HWPS method essentially does not damage the film surface.: The results indicate that CdS-free Cu(In, Ga)Se₂-based solar cells may be fabricated by sputtering ZnO:Ga directly on the Cu(In, Ga)Se₂ layer using the HWPS method.

Original language	English
Pages (from-to)	1109-1111
Number of pages	3
Journal	Physica Status Solidi (C) Current Topics in Solid State Physics
Volume	6
Issue number	5
DOIs	https://doi.org/10.1002/pssc.200881168
Publication status	Published - 2009
Event	16th International Conference on Ternary and Multinary Compounds, ICTMC16 - Berlin, Germany Duration: 2008 Sept 15 → 2008 Sept 19

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title = "Ga-doped ZnO transparent conducting films prepared by helicon-wave-excited plasma sputtering",

abstract = "Gallium-doped zinc oxide (ZnO:Ga) transparent conducting films were prepared by the helicon-wave-excited plasma sputtering (HWPS) method. The films exhibited a dominant [0001]-oriented growth with a small full width at half maximum of the (0002) ZnO diffraction peak (0.28 degrees). A high optical transmittance greater than 80% was achieved in the wavelength range between 400 and 1600 nm, because the HWPS method essentially does not damage the film surface.: The results indicate that CdS-free Cu(In, Ga)Se2-based solar cells may be fabricated by sputtering ZnO:Ga directly on the Cu(In, Ga)Se2 layer using the HWPS method.",

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T1 - Ga-doped ZnO transparent conducting films prepared by helicon-wave-excited plasma sputtering

AU - Masaki, Shingo

AU - Nakanishi, Hisayuki

AU - Sugiyama, Mutsumi

AU - Chichibu, Shigefusa F.

PY - 2009

Y1 - 2009

N2 - Gallium-doped zinc oxide (ZnO:Ga) transparent conducting films were prepared by the helicon-wave-excited plasma sputtering (HWPS) method. The films exhibited a dominant [0001]-oriented growth with a small full width at half maximum of the (0002) ZnO diffraction peak (0.28 degrees). A high optical transmittance greater than 80% was achieved in the wavelength range between 400 and 1600 nm, because the HWPS method essentially does not damage the film surface.: The results indicate that CdS-free Cu(In, Ga)Se2-based solar cells may be fabricated by sputtering ZnO:Ga directly on the Cu(In, Ga)Se2 layer using the HWPS method.

AB - Gallium-doped zinc oxide (ZnO:Ga) transparent conducting films were prepared by the helicon-wave-excited plasma sputtering (HWPS) method. The films exhibited a dominant [0001]-oriented growth with a small full width at half maximum of the (0002) ZnO diffraction peak (0.28 degrees). A high optical transmittance greater than 80% was achieved in the wavelength range between 400 and 1600 nm, because the HWPS method essentially does not damage the film surface.: The results indicate that CdS-free Cu(In, Ga)Se2-based solar cells may be fabricated by sputtering ZnO:Ga directly on the Cu(In, Ga)Se2 layer using the HWPS method.

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Ga-doped ZnO transparent conducting films prepared by helicon-wave-excited plasma sputtering

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