Gallium-doped zinc oxide (ZnO:Ga) transparent conducting films were prepared by the helicon-wave-excited plasma sputtering (HWPS) method. The films exhibited a dominant -oriented growth with a small full width at half maximum of the (0002) ZnO diffraction peak (0.28 degrees). A high optical transmittance greater than 80% was achieved in the wavelength range between 400 and 1600 nm, because the HWPS method essentially does not damage the film surface.: The results indicate that CdS-free Cu(In, Ga)Se2-based solar cells may be fabricated by sputtering ZnO:Ga directly on the Cu(In, Ga)Se2 layer using the HWPS method.
|Number of pages||3|
|Journal||Physica Status Solidi (C) Current Topics in Solid State Physics|
|Publication status||Published - 2009|
|Event||16th International Conference on Ternary and Multinary Compounds, ICTMC16 - Berlin, Germany|
Duration: 2008 Sept 15 → 2008 Sept 19