Ga-doped ZnO transparent conducting films prepared by helicon-wave-excited plasma sputtering

Shingo Masaki, Hisayuki Nakanishi, Mutsumi Sugiyama, Shigefusa F. Chichibu

Research output: Contribution to journalConference articlepeer-review

2 Citations (Scopus)


Gallium-doped zinc oxide (ZnO:Ga) transparent conducting films were prepared by the helicon-wave-excited plasma sputtering (HWPS) method. The films exhibited a dominant [0001]-oriented growth with a small full width at half maximum of the (0002) ZnO diffraction peak (0.28 degrees). A high optical transmittance greater than 80% was achieved in the wavelength range between 400 and 1600 nm, because the HWPS method essentially does not damage the film surface.: The results indicate that CdS-free Cu(In, Ga)Se2-based solar cells may be fabricated by sputtering ZnO:Ga directly on the Cu(In, Ga)Se2 layer using the HWPS method.

Original languageEnglish
Pages (from-to)1109-1111
Number of pages3
JournalPhysica Status Solidi (C) Current Topics in Solid State Physics
Issue number5
Publication statusPublished - 2009
Event16th International Conference on Ternary and Multinary Compounds, ICTMC16 - Berlin, Germany
Duration: 2008 Sept 152008 Sept 19


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