Ga0.47Ln0.53As Metal-Semiconductor-Metal Photodiodes Using a Lattice Mismatched Al0.4Ga0.6As Schottky Assist Layer

T. Kikuchi; H. Ohno; H. Hasegawa; T. kikuchi; H. ohno; H. hasegawa

doi:10.1049/el:19880821

Ga0.47Ln0.53As Metal-Semiconductor-Metal Photodiodes Using a Lattice Mismatched Al0.4Ga0.6As Schottky Assist Layer

T. Kikuchi, H. Ohno, H. Hasegawa, T. kikuchi, H. ohno, H. hasegawa

Research output: Contribution to journal › Article › peer-review

8 Citations (Scopus)

Abstract

Metal-semiconductor-metal photodiodes (MSM PDs) with Ga0.47In0.53As active layers were fabricated. The low Schottky barrier height of GaInAs was overcome by the insertion of a lattice mismatched AlGaAs intermediary layer between metal and GalnAs active layer. Fabricated MSM PDs utilising interdigitated metal electrodes formed by a self-alignment technique showed a fast rise and fall time of 650 ps, which was limited by the capacitance of the device. The gain of the device was less than 1. 0.

Original language	English
Pages (from-to)	1208-1210
Number of pages	3
Journal	Electronics Letters
Volume	24
Issue number	19
DOIs	https://doi.org/10.1049/el:19880821
Publication status	Published - 1988
Externally published	Yes

Keywords

Semiconductor devices and materials
Semiconductor growth
photodiodes

ASJC Scopus subject areas

Electrical and Electronic Engineering

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10.1049/el:19880821

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title = "Ga0.47Ln0.53As Metal-Semiconductor-Metal Photodiodes Using a Lattice Mismatched Al0.4Ga0.6As Schottky Assist Layer",

abstract = "Metal-semiconductor-metal photodiodes (MSM PDs) with Ga0.47In0.53As active layers were fabricated. The low Schottky barrier height of GaInAs was overcome by the insertion of a lattice mismatched AlGaAs intermediary layer between metal and GalnAs active layer. Fabricated MSM PDs utilising interdigitated metal electrodes formed by a self-alignment technique showed a fast rise and fall time of 650 ps, which was limited by the capacitance of the device. The gain of the device was less than 1. 0.",

keywords = "Semiconductor devices and materials, Semiconductor growth, photodiodes",

author = "T. Kikuchi and H. Ohno and H. Hasegawa and T. kikuchi and H. ohno and H. hasegawa",

year = "1988",

doi = "10.1049/el:19880821",

language = "English",

volume = "24",

pages = "1208--1210",

journal = "Electronics Letters",

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publisher = "Institution of Engineering and Technology",

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T1 - Ga0.47Ln0.53As Metal-Semiconductor-Metal Photodiodes Using a Lattice Mismatched Al0.4Ga0.6As Schottky Assist Layer

AU - Kikuchi, T.

AU - Ohno, H.

AU - Hasegawa, H.

AU - kikuchi, T.

AU - ohno, H.

AU - hasegawa, H.

PY - 1988

Y1 - 1988

N2 - Metal-semiconductor-metal photodiodes (MSM PDs) with Ga0.47In0.53As active layers were fabricated. The low Schottky barrier height of GaInAs was overcome by the insertion of a lattice mismatched AlGaAs intermediary layer between metal and GalnAs active layer. Fabricated MSM PDs utilising interdigitated metal electrodes formed by a self-alignment technique showed a fast rise and fall time of 650 ps, which was limited by the capacitance of the device. The gain of the device was less than 1. 0.

AB - Metal-semiconductor-metal photodiodes (MSM PDs) with Ga0.47In0.53As active layers were fabricated. The low Schottky barrier height of GaInAs was overcome by the insertion of a lattice mismatched AlGaAs intermediary layer between metal and GalnAs active layer. Fabricated MSM PDs utilising interdigitated metal electrodes formed by a self-alignment technique showed a fast rise and fall time of 650 ps, which was limited by the capacitance of the device. The gain of the device was less than 1. 0.

KW - Semiconductor devices and materials

KW - Semiconductor growth

KW - photodiodes

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DO - 10.1049/el:19880821

M3 - Article

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VL - 24

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JO - Electronics Letters

JF - Electronics Letters

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ER -

Ga0.47Ln0.53As Metal-Semiconductor-Metal Photodiodes Using a Lattice Mismatched Al0.4Ga0.6As Schottky Assist Layer

Abstract

Keywords

ASJC Scopus subject areas

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