GaAs- and InP-based high electron mobility transistors

Tetsuya Suemitsu

doi:10.1016/B978-0-323-96027-4.00010-3

GaAs- and InP-based high electron mobility transistors

Tetsuya Suemitsu

New Industry Creation Hatchery Center (NICHe)

Research output: Chapter in Book/Report/Conference proceeding › Chapter › peer-review

Abstract

High electron mobility transistors (HEMTs) are originally developed using GaAs-based compound semiconductor material systems and improved their high-frequency performance by using InP-based material systems. In this chapter, history and current status of HEMTs are reviewed. The contents include the operation principle of HEMTs, the characterization methodology, the process technologies, and the parasitic phenomena observed in HEMTs. Finally, the challenge and prospects for further improvements in high-frequency performance are discussed.

Original language	English
Title of host publication	Comprehensive Semiconductor Science and Technology, Second Edition
Subtitle of host publication	Volumes 1-3
Publisher	Elsevier
Pages	V3:11-V3:42
Volume	3
ISBN (Electronic)	9780323958196
ISBN (Print)	9780323960274
DOIs	https://doi.org/10.1016/B978-0-323-96027-4.00010-3
Publication status	Published - 2024 Jan 1

Keywords

FET
HEMT
Heterostructure
Millimeter-wave
Terahertz
Transistor
Two-dimensional electron gas

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10.1016/B978-0-323-96027-4.00010-3

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@inbook{8269b4fc0e6c43c486618fb230fa6576,

title = "GaAs- and InP-based high electron mobility transistors",

abstract = "High electron mobility transistors (HEMTs) are originally developed using GaAs-based compound semiconductor material systems and improved their high-frequency performance by using InP-based material systems. In this chapter, history and current status of HEMTs are reviewed. The contents include the operation principle of HEMTs, the characterization methodology, the process technologies, and the parasitic phenomena observed in HEMTs. Finally, the challenge and prospects for further improvements in high-frequency performance are discussed.",

keywords = "FET, HEMT, Heterostructure, Millimeter-wave, Terahertz, Transistor, Two-dimensional electron gas",

author = "Tetsuya Suemitsu",

note = "Publisher Copyright: {\textcopyright} 2025 Elsevier B.V. All rights are reserved, including those for text and data mining, AI training, and similar technologies.",

year = "2024",

month = jan,

day = "1",

doi = "10.1016/B978-0-323-96027-4.00010-3",

language = "English",

isbn = "9780323960274",

volume = "3",

pages = "V3:11--V3:42",

booktitle = "Comprehensive Semiconductor Science and Technology, Second Edition",

publisher = "Elsevier",

address = "Netherlands",

}

TY - CHAP

T1 - GaAs- and InP-based high electron mobility transistors

AU - Suemitsu, Tetsuya

PY - 2024/1/1

Y1 - 2024/1/1

N2 - High electron mobility transistors (HEMTs) are originally developed using GaAs-based compound semiconductor material systems and improved their high-frequency performance by using InP-based material systems. In this chapter, history and current status of HEMTs are reviewed. The contents include the operation principle of HEMTs, the characterization methodology, the process technologies, and the parasitic phenomena observed in HEMTs. Finally, the challenge and prospects for further improvements in high-frequency performance are discussed.

AB - High electron mobility transistors (HEMTs) are originally developed using GaAs-based compound semiconductor material systems and improved their high-frequency performance by using InP-based material systems. In this chapter, history and current status of HEMTs are reviewed. The contents include the operation principle of HEMTs, the characterization methodology, the process technologies, and the parasitic phenomena observed in HEMTs. Finally, the challenge and prospects for further improvements in high-frequency performance are discussed.

KW - FET

KW - HEMT

KW - Heterostructure

KW - Millimeter-wave

KW - Terahertz

KW - Transistor

KW - Two-dimensional electron gas

UR - http://www.scopus.com/inward/record.url?scp=85217074591&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85217074591&partnerID=8YFLogxK

U2 - 10.1016/B978-0-323-96027-4.00010-3

DO - 10.1016/B978-0-323-96027-4.00010-3

M3 - Chapter

AN - SCOPUS:85217074591

SN - 9780323960274

VL - 3

SP - V3:11-V3:42

BT - Comprehensive Semiconductor Science and Technology, Second Edition

PB - Elsevier

ER -

GaAs- and InP-based high electron mobility transistors

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Keywords

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