GaAs and In0.53Ga0.47as MIS structures having an ultrathin pseudomorphic interface control layer of si prepared by MBE

Hideki Hasegawa; Masamichi Akazawa; Ken Ichirou Matsuzaki; Hirotatsu Ishii; Hideo Ohno

doi:10.1143/JJAP.27.L2265

GaAs and In_0.53Ga_0.47as MIS structures having an ultrathin pseudomorphic interface control layer of si prepared by MBE

Hideki Hasegawa, Masamichi Akazawa, Ken Ichirou Matsuzaki, Hirotatsu Ishii, Hideo Ohno

Leadership

Hokkaido University

Research output: Contribution to journal › Article › peer-review

78 Citations (Scopus)

Abstract

A novel compound semiconductor MIS structure using an ultra-thin partially oxidized MBE Sifilm as a pseudomorphic interface control layer (ICL) is reported for GaAs and InGaAs. As an outer insulator layer, a silicon dioxide or silicon nitride film is deposited in-situ by a low-temperature photo-CVD process using an ArF excimer laser. While the GaAs MIS structure exhibited strong Fermilevel pinning, the InGaAs MIS structure showed completely “unpinned” behavior with avery small hysteresis after annealing. The difference is qualitatively explained by a band line-up of the constituent materials.

Original language	English
Pages (from-to)	L2265-L2267
Journal	Japanese Journal of Applied Physics
Volume	27
Issue number	12A
DOIs	https://doi.org/10.1143/JJAP.27.L2265
Publication status	Published - 1988 Dec

Keywords

C-V curves
Compound semiconductor
Fermi level pinning
Gaas
Ingaas
Inter-face state
MBE
MIS structure
Pseudomorphic
Unpinning

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10.1143/JJAP.27.L2265

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title = "GaAs and In0.53Ga0.47as MIS structures having an ultrathin pseudomorphic interface control layer of si prepared by MBE",

abstract = "A novel compound semiconductor MIS structure using an ultra-thin partially oxidized MBE Sifilm as a pseudomorphic interface control layer (ICL) is reported for GaAs and InGaAs. As an outer insulator layer, a silicon dioxide or silicon nitride film is deposited in-situ by a low-temperature photo-CVD process using an ArF excimer laser. While the GaAs MIS structure exhibited strong Fermilevel pinning, the InGaAs MIS structure showed completely “unpinned” behavior with avery small hysteresis after annealing. The difference is qualitatively explained by a band line-up of the constituent materials.",

keywords = "C-V curves, Compound semiconductor, Fermi level pinning, Gaas, Ingaas, Inter-face state, MBE, MIS structure, Pseudomorphic, Unpinning",

author = "Hideki Hasegawa and Masamichi Akazawa and Matsuzaki, {Ken Ichirou} and Hirotatsu Ishii and Hideo Ohno",

year = "1988",

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language = "English",

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publisher = "Japan Society of Applied Physics",

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T1 - GaAs and In0.53Ga0.47as MIS structures having an ultrathin pseudomorphic interface control layer of si prepared by MBE

AU - Hasegawa, Hideki

AU - Akazawa, Masamichi

AU - Matsuzaki, Ken Ichirou

AU - Ishii, Hirotatsu

AU - Ohno, Hideo

PY - 1988/12

Y1 - 1988/12

N2 - A novel compound semiconductor MIS structure using an ultra-thin partially oxidized MBE Sifilm as a pseudomorphic interface control layer (ICL) is reported for GaAs and InGaAs. As an outer insulator layer, a silicon dioxide or silicon nitride film is deposited in-situ by a low-temperature photo-CVD process using an ArF excimer laser. While the GaAs MIS structure exhibited strong Fermilevel pinning, the InGaAs MIS structure showed completely “unpinned” behavior with avery small hysteresis after annealing. The difference is qualitatively explained by a band line-up of the constituent materials.

AB - A novel compound semiconductor MIS structure using an ultra-thin partially oxidized MBE Sifilm as a pseudomorphic interface control layer (ICL) is reported for GaAs and InGaAs. As an outer insulator layer, a silicon dioxide or silicon nitride film is deposited in-situ by a low-temperature photo-CVD process using an ArF excimer laser. While the GaAs MIS structure exhibited strong Fermilevel pinning, the InGaAs MIS structure showed completely “unpinned” behavior with avery small hysteresis after annealing. The difference is qualitatively explained by a band line-up of the constituent materials.

KW - C-V curves

KW - Compound semiconductor

KW - Fermi level pinning

KW - Gaas

KW - Ingaas

KW - Inter-face state

KW - MBE

KW - MIS structure

KW - Pseudomorphic

KW - Unpinning

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SP - L2265-L2267

JO - Japanese Journal of Applied Physics

JF - Japanese Journal of Applied Physics

IS - 12A

ER -

GaAs and In_0.53Ga_0.47as MIS structures having an ultrathin pseudomorphic interface control layer of si prepared by MBE

Abstract

Keywords

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