Gain spectroscopy of continuous wave InGaN multi-quantum well laser diodes

T. Deguchi; T. Azuhata; T. Sota; S. Chichibu; M. Arita; H. Nakanishi; S. Nakamura

doi:10.1088/0268-1242/13/1/015

Gain spectroscopy of continuous wave InGaN multi-quantum well laser diodes

T. Deguchi, T. Azuhata, T. Sota, S. Chichibu, M. Arita, H. Nakanishi, S. Nakamura

IMRAM - Division of Measurements

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16 Citations (Scopus)

Abstract

A systematic study of the optical gain of continuous wave InGaN multiple quantum well laser diode wafers has been made using the variable excitation-stripe length method. Experimental evidence is given of stimulated emission enhanced by resonance between degenerate states and non-degenerate ones, which co-exist in quantum wells having spatial potential undulation due to considerable fluctuation of the InGaN composition.

Original language	English
Pages (from-to)	97-101
Number of pages	5
Journal	Semiconductor Science and Technology
Volume	13
Issue number	1
DOIs	https://doi.org/10.1088/0268-1242/13/1/015
Publication status	Published - 1998 Jan

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title = "Gain spectroscopy of continuous wave InGaN multi-quantum well laser diodes",

abstract = "A systematic study of the optical gain of continuous wave InGaN multiple quantum well laser diode wafers has been made using the variable excitation-stripe length method. Experimental evidence is given of stimulated emission enhanced by resonance between degenerate states and non-degenerate ones, which co-exist in quantum wells having spatial potential undulation due to considerable fluctuation of the InGaN composition.",

author = "T. Deguchi and T. Azuhata and T. Sota and S. Chichibu and M. Arita and H. Nakanishi and S. Nakamura",

year = "1998",

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T1 - Gain spectroscopy of continuous wave InGaN multi-quantum well laser diodes

AU - Deguchi, T.

AU - Azuhata, T.

AU - Sota, T.

AU - Chichibu, S.

AU - Arita, M.

AU - Nakanishi, H.

AU - Nakamura, S.

PY - 1998/1

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N2 - A systematic study of the optical gain of continuous wave InGaN multiple quantum well laser diode wafers has been made using the variable excitation-stripe length method. Experimental evidence is given of stimulated emission enhanced by resonance between degenerate states and non-degenerate ones, which co-exist in quantum wells having spatial potential undulation due to considerable fluctuation of the InGaN composition.

AB - A systematic study of the optical gain of continuous wave InGaN multiple quantum well laser diode wafers has been made using the variable excitation-stripe length method. Experimental evidence is given of stimulated emission enhanced by resonance between degenerate states and non-degenerate ones, which co-exist in quantum wells having spatial potential undulation due to considerable fluctuation of the InGaN composition.

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ER -

Gain spectroscopy of continuous wave InGaN multi-quantum well laser diodes

Abstract

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