GalnAsP/lnP DH lasers for the 1.3 μm region were fabricated through a single LPE process on semi-insulating InP substrates with a terrace structure. The threshold current of the mounted lasers was typically 65 mA under CW operation at room temperature. Light output of 450 mW per facet was achieved at a pulsed injection current of 4.2 A.
- Lasers and applications
- Semiconductor lasers