GaInAsP/InP DH laser on semi-insulating InP substrate with terrace structure

T. Matsuoka; Y. Suzuki; Y. Noguchi; H. Nagai

doi:10.1049/el:19820246

GaInAsP/InP DH laser on semi-insulating InP substrate with terrace structure

T. Matsuoka, Y. Suzuki, Y. Noguchi, H. Nagai

New Industry Creation Hatchery Center (NICHe)

Nippon Telegraph & Telephone

Research output: Contribution to journal › Article › peer-review

8 Citations (Scopus)

Abstract

GalnAsP/lnP DH lasers for the 1.3 μm region were fabricated through a single LPE process on semi-insulating InP substrates with a terrace structure. The threshold current of the mounted lasers was typically 65 mA under CW operation at room temperature. Light output of 450 mW per facet was achieved at a pulsed injection current of 4.2 A.

Original language	English
Pages (from-to)	359-361
Number of pages	3
Journal	Electronics Letters
Volume	18
Issue number	9
DOIs	https://doi.org/10.1049/el:19820246
Publication status	Published - 1982 Apr 29

Keywords

Lasers and applications
Semiconductor lasers

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10.1049/el:19820246

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title = "GaInAsP/InP DH laser on semi-insulating InP substrate with terrace structure",

abstract = "GalnAsP/lnP DH lasers for the 1.3 μm region were fabricated through a single LPE process on semi-insulating InP substrates with a terrace structure. The threshold current of the mounted lasers was typically 65 mA under CW operation at room temperature. Light output of 450 mW per facet was achieved at a pulsed injection current of 4.2 A.",

keywords = "Lasers and applications, Semiconductor lasers",

author = "T. Matsuoka and Y. Suzuki and Y. Noguchi and H. Nagai",

year = "1982",

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doi = "10.1049/el:19820246",

language = "English",

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pages = "359--361",

journal = "Electronics Letters",

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T1 - GaInAsP/InP DH laser on semi-insulating InP substrate with terrace structure

AU - Matsuoka, T.

AU - Suzuki, Y.

AU - Noguchi, Y.

AU - Nagai, H.

PY - 1982/4/29

Y1 - 1982/4/29

N2 - GalnAsP/lnP DH lasers for the 1.3 μm region were fabricated through a single LPE process on semi-insulating InP substrates with a terrace structure. The threshold current of the mounted lasers was typically 65 mA under CW operation at room temperature. Light output of 450 mW per facet was achieved at a pulsed injection current of 4.2 A.

AB - GalnAsP/lnP DH lasers for the 1.3 μm region were fabricated through a single LPE process on semi-insulating InP substrates with a terrace structure. The threshold current of the mounted lasers was typically 65 mA under CW operation at room temperature. Light output of 450 mW per facet was achieved at a pulsed injection current of 4.2 A.

KW - Lasers and applications

KW - Semiconductor lasers

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U2 - 10.1049/el:19820246

DO - 10.1049/el:19820246

M3 - Article

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VL - 18

SP - 359

EP - 361

JO - Electronics Letters

JF - Electronics Letters

IS - 9

ER -

GaInAsP/InP DH laser on semi-insulating InP substrate with terrace structure

Abstract

Keywords

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