The room temperature (RT) near-band-edge (NBE) luminescence in n-type ZnO:Ga epitaxial layers was investigated. The gallium doping concentration dependence of the radiative efficiency, threshold energy and the linewidth of the near-band-gap optical transition were studied. The RT NBE luminescence in ZnO:Ga was observed for Ga doping concentrations ranging from 8 × 10 18 to 6 × 1020 cm-3. For relatively low dopant concentrations, the NBE luminesacence was assigned to donor-to-free-hole recombination, while for higher concentrations it was assigned to donor-acceptor pair.
|Number of pages||3|
|Journal||Applied Physics Letters|
|Publication status||Published - 2004 Aug 2|
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)