Gallium concentration dependence of room-temperature near-band-edge luminescence in n-type ZnO:Ga

T. Makino; Y. Segawa; S. Yoshida; A. Tsukazaki; A. Ohtomo; M. Kawasaki

doi:10.1063/1.1776630

Gallium concentration dependence of room-temperature near-band-edge luminescence in n-type ZnO:Ga

T. Makino, Y. Segawa, S. Yoshida, A. Tsukazaki, A. Ohtomo, M. Kawasaki

Materials Property Division

Research output: Contribution to journal › Article › peer-review

178 Citations (Scopus)

Abstract

The room temperature (RT) near-band-edge (NBE) luminescence in n-type ZnO:Ga epitaxial layers was investigated. The gallium doping concentration dependence of the radiative efficiency, threshold energy and the linewidth of the near-band-gap optical transition were studied. The RT NBE luminescence in ZnO:Ga was observed for Ga doping concentrations ranging from 8 × 10 ¹⁸ to 6 × 10²⁰ cm^-3. For relatively low dopant concentrations, the NBE luminesacence was assigned to donor-to-free-hole recombination, while for higher concentrations it was assigned to donor-acceptor pair.

Original language	English
Pages (from-to)	759-761
Number of pages	3
Journal	Applied Physics Letters
Volume	85
Issue number	5
DOIs	https://doi.org/10.1063/1.1776630
Publication status	Published - 2004 Aug 2

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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abstract = "The room temperature (RT) near-band-edge (NBE) luminescence in n-type ZnO:Ga epitaxial layers was investigated. The gallium doping concentration dependence of the radiative efficiency, threshold energy and the linewidth of the near-band-gap optical transition were studied. The RT NBE luminescence in ZnO:Ga was observed for Ga doping concentrations ranging from 8 × 10 18 to 6 × 1020 cm-3. For relatively low dopant concentrations, the NBE luminesacence was assigned to donor-to-free-hole recombination, while for higher concentrations it was assigned to donor-acceptor pair.",

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T1 - Gallium concentration dependence of room-temperature near-band-edge luminescence in n-type ZnO:Ga

AU - Makino, T.

AU - Segawa, Y.

AU - Yoshida, S.

AU - Tsukazaki, A.

AU - Ohtomo, A.

AU - Kawasaki, M.

PY - 2004/8/2

Y1 - 2004/8/2

N2 - The room temperature (RT) near-band-edge (NBE) luminescence in n-type ZnO:Ga epitaxial layers was investigated. The gallium doping concentration dependence of the radiative efficiency, threshold energy and the linewidth of the near-band-gap optical transition were studied. The RT NBE luminescence in ZnO:Ga was observed for Ga doping concentrations ranging from 8 × 10 18 to 6 × 1020 cm-3. For relatively low dopant concentrations, the NBE luminesacence was assigned to donor-to-free-hole recombination, while for higher concentrations it was assigned to donor-acceptor pair.

AB - The room temperature (RT) near-band-edge (NBE) luminescence in n-type ZnO:Ga epitaxial layers was investigated. The gallium doping concentration dependence of the radiative efficiency, threshold energy and the linewidth of the near-band-gap optical transition were studied. The RT NBE luminescence in ZnO:Ga was observed for Ga doping concentrations ranging from 8 × 10 18 to 6 × 1020 cm-3. For relatively low dopant concentrations, the NBE luminesacence was assigned to donor-to-free-hole recombination, while for higher concentrations it was assigned to donor-acceptor pair.

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Gallium concentration dependence of room-temperature near-band-edge luminescence in n-type ZnO:Ga

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