(Ga,Mn)As: A new diluted magnetic semiconductor based on GaAs

H. Ohno; A. Shen; F. Matsukura; A. Oiwa; A. Endo; S. Katsumoto; Y. Iye

doi:10.1063/1.118061

(Ga,Mn)As: A new diluted magnetic semiconductor based on GaAs

H. Ohno, A. Shen, F. Matsukura, A. Oiwa, A. Endo, S. Katsumoto, Y. Iye

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Abstract

A new GaAs-based diluted magnetic semiconductor, (Ga,Mn)As, was prepared by molecular beam epitaxy. The lattice constant of (Ga,Mn)As films was determined by x-ray diffraction and shown to increase with the increase of Mn composition, x. Well-aligned in-plane ferromagnetic order was observed by magnetization measurements. Magnetotransport measurements revealed the occurrence of anomalous Hall effect in the (Ga,Mn)As layer.

Original language	English
Pages (from-to)	363-365
Number of pages	3
Journal	Applied Physics Letters
Volume	69
Issue number	3
DOIs	https://doi.org/10.1063/1.118061
Publication status	Published - 1996 Jul 15

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abstract = "A new GaAs-based diluted magnetic semiconductor, (Ga,Mn)As, was prepared by molecular beam epitaxy. The lattice constant of (Ga,Mn)As films was determined by x-ray diffraction and shown to increase with the increase of Mn composition, x. Well-aligned in-plane ferromagnetic order was observed by magnetization measurements. Magnetotransport measurements revealed the occurrence of anomalous Hall effect in the (Ga,Mn)As layer.",

author = "H. Ohno and A. Shen and F. Matsukura and A. Oiwa and A. Endo and S. Katsumoto and Y. Iye",

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T2 - A new diluted magnetic semiconductor based on GaAs

AU - Ohno, H.

AU - Shen, A.

AU - Matsukura, F.

AU - Oiwa, A.

AU - Endo, A.

AU - Katsumoto, S.

AU - Iye, Y.

PY - 1996/7/15

Y1 - 1996/7/15

N2 - A new GaAs-based diluted magnetic semiconductor, (Ga,Mn)As, was prepared by molecular beam epitaxy. The lattice constant of (Ga,Mn)As films was determined by x-ray diffraction and shown to increase with the increase of Mn composition, x. Well-aligned in-plane ferromagnetic order was observed by magnetization measurements. Magnetotransport measurements revealed the occurrence of anomalous Hall effect in the (Ga,Mn)As layer.

AB - A new GaAs-based diluted magnetic semiconductor, (Ga,Mn)As, was prepared by molecular beam epitaxy. The lattice constant of (Ga,Mn)As films was determined by x-ray diffraction and shown to increase with the increase of Mn composition, x. Well-aligned in-plane ferromagnetic order was observed by magnetization measurements. Magnetotransport measurements revealed the occurrence of anomalous Hall effect in the (Ga,Mn)As layer.

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JO - Applied Physics Letters

JF - Applied Physics Letters

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(Ga,Mn)As: A new diluted magnetic semiconductor based on GaAs

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