(Ga,Mn)As: A new diluted magnetic semiconductor based on GaAs

H. Ohno, A. Shen, F. Matsukura, A. Oiwa, A. Endo, S. Katsumoto, Y. Iye

Research output: Contribution to journalArticlepeer-review

2283 Citations (Scopus)


A new GaAs-based diluted magnetic semiconductor, (Ga,Mn)As, was prepared by molecular beam epitaxy. The lattice constant of (Ga,Mn)As films was determined by x-ray diffraction and shown to increase with the increase of Mn composition, x. Well-aligned in-plane ferromagnetic order was observed by magnetization measurements. Magnetotransport measurements revealed the occurrence of anomalous Hall effect in the (Ga,Mn)As layer.

Original languageEnglish
Pages (from-to)363-365
Number of pages3
JournalApplied Physics Letters
Issue number3
Publication statusPublished - 1996 Jul 15


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