TY - GEN
T1 - Gan comb-drive actuators on Si substrate
AU - Tanae, T.
AU - Samashima, H.
AU - Hane, K.
PY - 2011
Y1 - 2011
N2 - Micro-electro-mechanical comb-drive actuators made of GaN crystal are studied for an integrated a tunable GaN optical device. The GaN crystal was grown on a Si substrate by metal-organic chemical vapor deposition (MOCVD) with a low-temperature buffer layer. Selectively etching the Si substrate by XeF 2 gas, the GaN thin crystal layers are self-supported in air. Due to the residual stress by the crystal growth, the freestanding GaN layer of actuator suffers from the considerable deformation depending on the growth conditions. To compensate the convex deformation, the crystallization tension of thin HfO2 film deposited on the GaN layer is used. The displacement is 1.3 m at 70V. The fabricated GaN actuator can be useful for the monolithic integration for tunable GaN light sources.
AB - Micro-electro-mechanical comb-drive actuators made of GaN crystal are studied for an integrated a tunable GaN optical device. The GaN crystal was grown on a Si substrate by metal-organic chemical vapor deposition (MOCVD) with a low-temperature buffer layer. Selectively etching the Si substrate by XeF 2 gas, the GaN thin crystal layers are self-supported in air. Due to the residual stress by the crystal growth, the freestanding GaN layer of actuator suffers from the considerable deformation depending on the growth conditions. To compensate the convex deformation, the crystallization tension of thin HfO2 film deposited on the GaN layer is used. The displacement is 1.3 m at 70V. The fabricated GaN actuator can be useful for the monolithic integration for tunable GaN light sources.
KW - Comb actuator
KW - GaN
KW - GaN on Si
KW - Monolithic Integration
KW - Residual stress
UR - http://www.scopus.com/inward/record.url?scp=80052110229&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=80052110229&partnerID=8YFLogxK
U2 - 10.1109/TRANSDUCERS.2011.5969614
DO - 10.1109/TRANSDUCERS.2011.5969614
M3 - Conference contribution
AN - SCOPUS:80052110229
SN - 9781457701573
T3 - 2011 16th International Solid-State Sensors, Actuators and Microsystems Conference, TRANSDUCERS'11
SP - 486
EP - 489
BT - 2011 16th International Solid-State Sensors, Actuators and Microsystems Conference, TRANSDUCERS'11
T2 - 2011 16th International Solid-State Sensors, Actuators and Microsystems Conference, TRANSDUCERS'11
Y2 - 5 June 2011 through 9 June 2011
ER -