GaN nanodot fabrication by implant source growth

R. Buckmaster; J. H. Yoo; K. Shin; Y. Yao; T. Sekiguchi; M. Yokoyama; T. Hanada; T. Goto; M. Cho; Y. Kawazoe; T. Yao

doi:10.1016/j.mejo.2005.02.046

GaN nanodot fabrication by implant source growth

R. Buckmaster, J. H. Yoo, K. Shin, Y. Yao, T. Sekiguchi, M. Yokoyama, T. Hanada, T. Goto, M. Cho, Y. Kawazoe, T. Yao

Materials Design Division

Research output: Contribution to journal › Conference article › peer-review

3 Citations (Scopus)

Abstract

By using implant source growth, an ion beam synthesis technique where implanted ions are used as a growth source for nanostructures, we have fabricated self-assembled GaN nanodots on SiO₂. The fabrication method consists of implanting Ga ions into a 60 nm thick thermally grown SiO₂ layer by using a focused ion beam system followed by annealing under an NH₃ flux. The morphology, crystal structure, and optical properties of the GaN nanodots are also shown and discussed.

Original language	English
Pages (from-to)	456-459
Number of pages	4
Journal	Microelectronics Journal
Volume	36
Issue number	3-6
DOIs	https://doi.org/10.1016/j.mejo.2005.02.046
Publication status	Published - 2005 Mar

Keywords

GaN
Ion beam synthesis
Nanodot
Self-assembly

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Condensed Matter Physics
Surfaces, Coatings and Films
Electrical and Electronic Engineering

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10.1016/j.mejo.2005.02.046

Cite this

@article{a170838a727b4907b4c253bf903e3697,

title = "GaN nanodot fabrication by implant source growth",

abstract = "By using implant source growth, an ion beam synthesis technique where implanted ions are used as a growth source for nanostructures, we have fabricated self-assembled GaN nanodots on SiO2. The fabrication method consists of implanting Ga ions into a 60 nm thick thermally grown SiO2 layer by using a focused ion beam system followed by annealing under an NH3 flux. The morphology, crystal structure, and optical properties of the GaN nanodots are also shown and discussed.",

keywords = "GaN, Ion beam synthesis, Nanodot, Self-assembly",

author = "R. Buckmaster and Yoo, {J. H.} and K. Shin and Y. Yao and T. Sekiguchi and M. Yokoyama and T. Hanada and T. Goto and M. Cho and Y. Kawazoe and T. Yao",

note = "Funding Information: One of the authors, R. Buckmaster, thanks the Japanese Ministry of Education, Culture, Sports, Science and Technology for support. Also we thank the Tohoku University COE Program for access to the FIB system used in this work.",

year = "2005",

month = mar,

doi = "10.1016/j.mejo.2005.02.046",

language = "English",

volume = "36",

pages = "456--459",

journal = "Microelectronics",

issn = "0026-2692",

publisher = "Elsevier Limited",

number = "3-6",

}

TY - JOUR

T1 - GaN nanodot fabrication by implant source growth

AU - Buckmaster, R.

AU - Yoo, J. H.

AU - Shin, K.

AU - Yao, Y.

AU - Sekiguchi, T.

AU - Yokoyama, M.

AU - Hanada, T.

AU - Goto, T.

AU - Cho, M.

AU - Kawazoe, Y.

AU - Yao, T.

N1 - Funding Information: One of the authors, R. Buckmaster, thanks the Japanese Ministry of Education, Culture, Sports, Science and Technology for support. Also we thank the Tohoku University COE Program for access to the FIB system used in this work.

PY - 2005/3

Y1 - 2005/3

N2 - By using implant source growth, an ion beam synthesis technique where implanted ions are used as a growth source for nanostructures, we have fabricated self-assembled GaN nanodots on SiO2. The fabrication method consists of implanting Ga ions into a 60 nm thick thermally grown SiO2 layer by using a focused ion beam system followed by annealing under an NH3 flux. The morphology, crystal structure, and optical properties of the GaN nanodots are also shown and discussed.

AB - By using implant source growth, an ion beam synthesis technique where implanted ions are used as a growth source for nanostructures, we have fabricated self-assembled GaN nanodots on SiO2. The fabrication method consists of implanting Ga ions into a 60 nm thick thermally grown SiO2 layer by using a focused ion beam system followed by annealing under an NH3 flux. The morphology, crystal structure, and optical properties of the GaN nanodots are also shown and discussed.

KW - GaN

KW - Ion beam synthesis

KW - Nanodot

KW - Self-assembly

UR - http://www.scopus.com/inward/record.url?scp=33644544712&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=33644544712&partnerID=8YFLogxK

U2 - 10.1016/j.mejo.2005.02.046

DO - 10.1016/j.mejo.2005.02.046

M3 - Conference article

AN - SCOPUS:33644544712

SN - 0026-2692

VL - 36

SP - 456

EP - 459

JO - Microelectronics

JF - Microelectronics

IS - 3-6

ER -

GaN nanodot fabrication by implant source growth

Abstract

Keywords

ASJC Scopus subject areas

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