GaN pitch-variable grating fabricated on Si substrate

H. Sameshima, T. Tanae, F. Hu, K. Hane

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

5 Citations (Scopus)

Abstract

A tunable grating is fabricated by micromachining a GaN crystal layer grown on Si substrate. The tunable grating consists of grating lines, electro-static comb-drive actuator and connection springs. The grating consists of 85nm wide, 12μm long 24 grating lines with 674nm period. The crystallization stress of an HfO2 layer deposited on the GaN crystal is used to compensate the residual stress of the GaN crystal grown on Si substrate. The freestanding GaN structure consisting of the grating and the actuator is fabricated by etching the Si substrate with XeF2 gas. Applying the voltage of 140V, the grating is expanded by 600nm corresponding to the period change of 3.7%.

Original languageEnglish
Title of host publication2010 International Conference on Optical MEMS and Nanophotonics, Optical MEMS and Nanophotonics 2010
Pages79-80
Number of pages2
DOIs
Publication statusPublished - 2010
Event2010 International Conference on Optical MEMS and Nanophotonics, Optical MEMS and Nanophotonics 2010 - Sapporo, Japan
Duration: 2010 Aug 92010 Aug 12

Publication series

Name2010 International Conference on Optical MEMS and Nanophotonics, Optical MEMS and Nanophotonics 2010

Conference

Conference2010 International Conference on Optical MEMS and Nanophotonics, Optical MEMS and Nanophotonics 2010
Country/TerritoryJapan
CitySapporo
Period10/8/910/8/12

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