GaN single crystal growth from a Na-Ga melt

H. Yamane, D. Kinno, M. Shimada, T. Sekiguchi, F. J. Disalvo

Research output: Contribution to journalArticlepeer-review

44 Citations (Scopus)


GaN single crystals were prepared in a sealed stainless-steel tube container at 650-840 °C for 6-300 h using Ga, NaN3, and Na as starting materials. A thin GaN layer covered Na-Ga melt surface at the initial stage of reaction between Ga in the Na-Ga melt and N2 given by the thermal decomposition of NaN3 around 300 °C. In the next stage, pyramidal and prismatic GaN single crystals grew under the layer. Prismatic and platelet crystals also grew from the melt which wetted the tube wall. The reaction rate was enhanced by increasing temperature and by increasing Na content in the melt. The maximum size of pyramidal crystals was about 0.7 mm. The platelet crystals were 1-2 mm in one direction and <0.05 mm thick. The platelet single crystals prepared at 650 °C exhibited the sharpest cathodoluminescence peak with the strongest intensity at 362 nm.

Original languageEnglish
Pages (from-to)801-808
Number of pages8
JournalJournal of Materials Science
Issue number4
Publication statusPublished - 2000


Dive into the research topics of 'GaN single crystal growth from a Na-Ga melt'. Together they form a unique fingerprint.

Cite this