Gate and recess engineering for ultrahigh-speed InP-based HEMTs

Tetsuya Suemitsu, Tetsuyoshi Ishii, Yasunobu Ishii

Research output: Contribution to journalArticlepeer-review

10 Citations (Scopus)


InP-based high electron mobility transistors (HEMTs) with gate lenghts reduced to 30 nm were fabricated and characterized, and the effect of the gate recess on the high-frequency characteristics was studied. The cutoff frequency, which is regarded as a function of the gate length and the average carrier velocity in a first-order approximation, depends on the size of the gate recess when the gate length becomes short. The size of the recess is optimized by taking the feed-back capacitance and the parasitic resistance into account. For HEMTs having the gate recess with an InP surface, an appropriate widening of the gate recess gives a record cutoff frequency of 368 GHz for the 30-nm-gate HEMTs with a lattice-matched channel.

Original languageEnglish
Pages (from-to)1283-1288
Number of pages6
JournalIEICE Transactions on Electronics
Issue number10
Publication statusPublished - 2001 Oct


  • HEMTs
  • High-speed devices
  • Indium phosphide
  • Millimeter wave FETs


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