TY - JOUR
T1 - Gate capacitance in electrochemical transistor of single-walled carbon nanotube
AU - Shimotani, Hidekazu
AU - Kanbara, Takayoshi
AU - Iwasa, Yoshihiro
AU - Tsukagoshi, Kazuhito
AU - Aoyagi, Yoshinobu
AU - Kataura, Hiromichi
N1 - Funding Information:
This work was partly supported by Tohoku University Materials Research Center under the program of 21st century COE.
PY - 2006
Y1 - 2006
N2 - In the electrochemical transistor of a single-walled carbon nanotube, we introduced the fourth terminal, which works as a reference electrode. This enables accurate control of change in gate voltage, i.e., potential difference between the electrolyte and the source electrode, and quantitative analyses of the gate capacitance. We found that the geometrical capacitance, which was ignored in the conventional model, makes a crucial contribution to the device characteristics, comparable to that from the chemical capacitance.
AB - In the electrochemical transistor of a single-walled carbon nanotube, we introduced the fourth terminal, which works as a reference electrode. This enables accurate control of change in gate voltage, i.e., potential difference between the electrolyte and the source electrode, and quantitative analyses of the gate capacitance. We found that the geometrical capacitance, which was ignored in the conventional model, makes a crucial contribution to the device characteristics, comparable to that from the chemical capacitance.
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U2 - 10.1063/1.2173626
DO - 10.1063/1.2173626
M3 - Article
AN - SCOPUS:32944463139
SN - 0003-6951
VL - 88
JO - Applied Physics Letters
JF - Applied Physics Letters
IS - 7
M1 - 073104
ER -