Gate control of dynamic nuclear polarization in GaAs quantum wells

H. Sanada; S. Matsuzaka; K. Morita; C. Y. Hu; Y. Ohno; H. Ohno

doi:10.1103/PhysRevLett.94.097601

Gate control of dynamic nuclear polarization in GaAs quantum wells

H. Sanada, S. Matsuzaka, K. Morita, C. Y. Hu, Y. Ohno, H. Ohno

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Abstract

Gate control of dynamic nuclear polarization under optical orientation is demonstrated in a Schottkygated n-GaAs/AlGaAs (110) quantum well by time-resolved Kerr rotation measurements. Spin relaxation of electrons due to mechanisms other than the hyperfine interaction is effectively suppressed as the donor induced background electron density is reduced from metallic to insulating regimes. Subsequent accumulation of photoexcited electron spins dramatically enhances dynamic nuclear polarization at low magnetic field, allowing us to tune nuclear spin polarization by external gate voltages.

Original language	English
Article number	097601
Journal	Physical Review Letters
Volume	94
Issue number	9
DOIs	https://doi.org/10.1103/PhysRevLett.94.097601
Publication status	Published - 2005 Mar 11

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10.1103/PhysRevLett.94.097601

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AU - Sanada, H.

AU - Matsuzaka, S.

AU - Morita, K.

AU - Hu, C. Y.

AU - Ohno, Y.

AU - Ohno, H.

PY - 2005/3/11

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AB - Gate control of dynamic nuclear polarization under optical orientation is demonstrated in a Schottkygated n-GaAs/AlGaAs (110) quantum well by time-resolved Kerr rotation measurements. Spin relaxation of electrons due to mechanisms other than the hyperfine interaction is effectively suppressed as the donor induced background electron density is reduced from metallic to insulating regimes. Subsequent accumulation of photoexcited electron spins dramatically enhances dynamic nuclear polarization at low magnetic field, allowing us to tune nuclear spin polarization by external gate voltages.

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Gate control of dynamic nuclear polarization in GaAs quantum wells

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