Gate control of spin-orbit interaction in an inverted |n0.53Ga0.47As/|n0.52Al0.48as heterostructure

Junsaku Nitta; Tatsushi Akazaki; Hideaki Takayanagi; Takatomo Enoki

doi:10.1103/PhysRevLett.78.1335

Gate control of spin-orbit interaction in an inverted |n_0.53Ga_0.47As/|n_0.52Al_0.48as heterostructure

Junsaku Nitta, Tatsushi Akazaki, Hideaki Takayanagi, Takatomo Enoki

Research output: Contribution to journal › Article › peer-review

1965 Citations (Scopus)

Abstract

We have confirmed that a spin-orbit interaction in an inverted Gate Control of Spin-Orbit Interaction in an Inverted |n_0.53Ga_0.47As/|n_0.52Al_0.48As Heterostructure As quantum well can be controlled by applying a gate voltage. This result shows that the spin-orbit interaction of a two-dimensional electron gas depends on the surface electric field. The dominant mechanism for the change in the spin-orbit interaction parameter can be attributed to the Rashba term. This inverted |n_0.53Ga_0.47As/|n_0.52Al_0.48 As heterostructure is one of the promising materials for the spin-polarized field effect transistor which is proposed by Datta and Das [Appl. Phys. Lett. 56, 665 (1990)].

Original language	English
Pages (from-to)	1335-1338
Number of pages	4
Journal	Physical review letters
Volume	78
Issue number	7
DOIs	https://doi.org/10.1103/PhysRevLett.78.1335
Publication status	Published - 1997 Feb 17
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy(all)

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10.1103/PhysRevLett.78.1335

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title = "Gate control of spin-orbit interaction in an inverted |n0.53Ga0.47As/|n0.52Al0.48as heterostructure",

abstract = "We have confirmed that a spin-orbit interaction in an inverted Gate Control of Spin-Orbit Interaction in an Inverted |n0.53Ga0.47As/|n0.52Al0.48As Heterostructure As quantum well can be controlled by applying a gate voltage. This result shows that the spin-orbit interaction of a two-dimensional electron gas depends on the surface electric field. The dominant mechanism for the change in the spin-orbit interaction parameter can be attributed to the Rashba term. This inverted |n0.53Ga0.47As/|n0.52Al0.48 As heterostructure is one of the promising materials for the spin-polarized field effect transistor which is proposed by Datta and Das [Appl. Phys. Lett. 56, 665 (1990)].",

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T1 - Gate control of spin-orbit interaction in an inverted |n0.53Ga0.47As/|n0.52Al0.48as heterostructure

AU - Nitta, Junsaku

AU - Akazaki, Tatsushi

AU - Takayanagi, Hideaki

AU - Enoki, Takatomo

PY - 1997/2/17

Y1 - 1997/2/17

N2 - We have confirmed that a spin-orbit interaction in an inverted Gate Control of Spin-Orbit Interaction in an Inverted |n0.53Ga0.47As/|n0.52Al0.48As Heterostructure As quantum well can be controlled by applying a gate voltage. This result shows that the spin-orbit interaction of a two-dimensional electron gas depends on the surface electric field. The dominant mechanism for the change in the spin-orbit interaction parameter can be attributed to the Rashba term. This inverted |n0.53Ga0.47As/|n0.52Al0.48 As heterostructure is one of the promising materials for the spin-polarized field effect transistor which is proposed by Datta and Das [Appl. Phys. Lett. 56, 665 (1990)].

AB - We have confirmed that a spin-orbit interaction in an inverted Gate Control of Spin-Orbit Interaction in an Inverted |n0.53Ga0.47As/|n0.52Al0.48As Heterostructure As quantum well can be controlled by applying a gate voltage. This result shows that the spin-orbit interaction of a two-dimensional electron gas depends on the surface electric field. The dominant mechanism for the change in the spin-orbit interaction parameter can be attributed to the Rashba term. This inverted |n0.53Ga0.47As/|n0.52Al0.48 As heterostructure is one of the promising materials for the spin-polarized field effect transistor which is proposed by Datta and Das [Appl. Phys. Lett. 56, 665 (1990)].

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Gate control of spin-orbit interaction in an inverted |n_0.53Ga_0.47As/|n_0.52Al_0.48as heterostructure

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