Gate control of spin-orbit interaction in an inverted |n0.53Ga0.47As/|n0.52Al0.48as heterostructure

Junsaku Nitta, Tatsushi Akazaki, Hideaki Takayanagi, Takatomo Enoki

Research output: Contribution to journalArticlepeer-review

1965 Citations (Scopus)


We have confirmed that a spin-orbit interaction in an inverted Gate Control of Spin-Orbit Interaction in an Inverted |n0.53Ga0.47As/|n0.52Al0.48As Heterostructure As quantum well can be controlled by applying a gate voltage. This result shows that the spin-orbit interaction of a two-dimensional electron gas depends on the surface electric field. The dominant mechanism for the change in the spin-orbit interaction parameter can be attributed to the Rashba term. This inverted |n0.53Ga0.47As/|n0.52Al0.48 As heterostructure is one of the promising materials for the spin-polarized field effect transistor which is proposed by Datta and Das [Appl. Phys. Lett. 56, 665 (1990)].

Original languageEnglish
Pages (from-to)1335-1338
Number of pages4
JournalPhysical review letters
Issue number7
Publication statusPublished - 1997 Feb 17
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy(all)


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