We have confirmed that a spin-orbit interaction in an inverted Gate Control of Spin-Orbit Interaction in an Inverted |n0.53Ga0.47As/|n0.52Al0.48As Heterostructure As quantum well can be controlled by applying a gate voltage. This result shows that the spin-orbit interaction of a two-dimensional electron gas depends on the surface electric field. The dominant mechanism for the change in the spin-orbit interaction parameter can be attributed to the Rashba term. This inverted |n0.53Ga0.47As/|n0.52Al0.48 As heterostructure is one of the promising materials for the spin-polarized field effect transistor which is proposed by Datta and Das [Appl. Phys. Lett. 56, 665 (1990)].
|Number of pages||4|
|Journal||Physical review letters|
|Publication status||Published - 1997 Feb 17|
ASJC Scopus subject areas
- Physics and Astronomy(all)