Gate-controlled switching between persistent and inverse persistent spin helix states

K. Yoshizumi; A. Sasaki; M. Kohda; J. Nitta

doi:10.1063/1.4944931

Gate-controlled switching between persistent and inverse persistent spin helix states

K. Yoshizumi, A. Sasaki, M. Kohda, J. Nitta

ENG - Materials Science

Tohoku University

Research output: Contribution to journal › Article › peer-review

23 Citations (Scopus)

Abstract

We demonstrate gate-controlled switching between persistent spin helix (PSH) state and inverse PSH state, which are detected by quantum interference effect on magneto-conductance. These special symmetric spin states showing weak localization effect give rise to a long spin coherence when the strength of Rashba spin-orbit interaction (SOI) is close to that of Dresselhaus SOI. Furthermore, in the middle of two persistent spin helix states, where the Rashba SOI can be negligible, the bulk Dresselhaus SOI parameter in a modulation doped InGaAs/InAlAs quantum well is determined.

Original language	English
Article number	132402
Journal	Applied Physics Letters
Volume	108
Issue number	13
DOIs	https://doi.org/10.1063/1.4944931
Publication status	Published - 2016 Mar 28

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title = "Gate-controlled switching between persistent and inverse persistent spin helix states",

abstract = "We demonstrate gate-controlled switching between persistent spin helix (PSH) state and inverse PSH state, which are detected by quantum interference effect on magneto-conductance. These special symmetric spin states showing weak localization effect give rise to a long spin coherence when the strength of Rashba spin-orbit interaction (SOI) is close to that of Dresselhaus SOI. Furthermore, in the middle of two persistent spin helix states, where the Rashba SOI can be negligible, the bulk Dresselhaus SOI parameter in a modulation doped InGaAs/InAlAs quantum well is determined.",

author = "K. Yoshizumi and A. Sasaki and M. Kohda and J. Nitta",

note = "Funding Information: This work was supported by the Japan Society for the Promotion of Science with Grants-in-Aid (15H05699, 15H02099, and 25220604) and by ImPACT Program of Council for Science, Technology and Innovation. J.N. acknowledges partial support from the Strategic Japanese-German Joint Research Program. Publisher Copyright: {\textcopyright} 2016 AIP Publishing LLC.",

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doi = "10.1063/1.4944931",

language = "English",

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T1 - Gate-controlled switching between persistent and inverse persistent spin helix states

AU - Yoshizumi, K.

AU - Sasaki, A.

AU - Kohda, M.

AU - Nitta, J.

N1 - Funding Information: This work was supported by the Japan Society for the Promotion of Science with Grants-in-Aid (15H05699, 15H02099, and 25220604) and by ImPACT Program of Council for Science, Technology and Innovation. J.N. acknowledges partial support from the Strategic Japanese-German Joint Research Program. Publisher Copyright: © 2016 AIP Publishing LLC.

PY - 2016/3/28

Y1 - 2016/3/28

N2 - We demonstrate gate-controlled switching between persistent spin helix (PSH) state and inverse PSH state, which are detected by quantum interference effect on magneto-conductance. These special symmetric spin states showing weak localization effect give rise to a long spin coherence when the strength of Rashba spin-orbit interaction (SOI) is close to that of Dresselhaus SOI. Furthermore, in the middle of two persistent spin helix states, where the Rashba SOI can be negligible, the bulk Dresselhaus SOI parameter in a modulation doped InGaAs/InAlAs quantum well is determined.

AB - We demonstrate gate-controlled switching between persistent spin helix (PSH) state and inverse PSH state, which are detected by quantum interference effect on magneto-conductance. These special symmetric spin states showing weak localization effect give rise to a long spin coherence when the strength of Rashba spin-orbit interaction (SOI) is close to that of Dresselhaus SOI. Furthermore, in the middle of two persistent spin helix states, where the Rashba SOI can be negligible, the bulk Dresselhaus SOI parameter in a modulation doped InGaAs/InAlAs quantum well is determined.

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JF - Applied Physics Letters

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M1 - 132402

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Gate-controlled switching between persistent and inverse persistent spin helix states

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