TY - JOUR
T1 - Gate structure dependence of variability in polycrystalline silicon fin-channel flash memories
AU - Liu, Yongxun
AU - Kamei, Takahiro
AU - Matsukawa, Takashi
AU - Endo, Kazuhiko
AU - O'Uchi, Shinichi
AU - Tsukada, Junichi
AU - Yamauchi, Hiromi
AU - Ishikawa, Yuki
AU - Hayashida, Tetsuro
AU - Sakamoto, Kunihiro
AU - Ogura, Atsushi
AU - Masahara, Meishoku
PY - 2013/6
Y1 - 2013/6
N2 - Polycrystalline silicon (poly-Si) fin-channel tri-gate (TG)- and double-gate (DG)-type flash memories with a thin n+-poly-Si floating gate (FG) and different control-gate (CG) lengths (LCG's) from 76 to 256nm have been fabricated and their electrical characteristics including statistical threshold voltage (Vt) and subthreshold slope (S-slope) have been comparatively investigated before and after one program/erase (P/E) cycle. It was experimentally found that better short-channel effect (SCE) immunity, a smaller Vt variation, and a higher program speed are obtained in TG-type flash memories than in DG-type memories. The higher performance of TG-type flash memories is contributed by the additional top gate and recessed bottom silicon dioxide (SiO2) regions, which strengthen the controllability of the channel potential and increase the coupling ratio of the FG to the CG. Therefore, the developed poly-Si fin-channel TG structure is expected to be very useful for the fabrication of high-density and lowcost flash memories.
AB - Polycrystalline silicon (poly-Si) fin-channel tri-gate (TG)- and double-gate (DG)-type flash memories with a thin n+-poly-Si floating gate (FG) and different control-gate (CG) lengths (LCG's) from 76 to 256nm have been fabricated and their electrical characteristics including statistical threshold voltage (Vt) and subthreshold slope (S-slope) have been comparatively investigated before and after one program/erase (P/E) cycle. It was experimentally found that better short-channel effect (SCE) immunity, a smaller Vt variation, and a higher program speed are obtained in TG-type flash memories than in DG-type memories. The higher performance of TG-type flash memories is contributed by the additional top gate and recessed bottom silicon dioxide (SiO2) regions, which strengthen the controllability of the channel potential and increase the coupling ratio of the FG to the CG. Therefore, the developed poly-Si fin-channel TG structure is expected to be very useful for the fabrication of high-density and lowcost flash memories.
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U2 - 10.7567/JJAP.52.06GE01
DO - 10.7567/JJAP.52.06GE01
M3 - Article
AN - SCOPUS:84881000203
SN - 0021-4922
VL - 52
JO - Japanese Journal of Applied Physics
JF - Japanese Journal of Applied Physics
IS - 6 PART 2
M1 - 06GE01
ER -