Gate-Tunable Anomalous Hall Effect in Stacked van der Waals Ferromagnetic Insulator-Topological Insulator Heterostructures

Andres E. Llacsahuanga Allcca, Xing Chen Pan, Ireneusz Miotkowski, Katsumi Tanigaki, Yong P. Chen

Research output: Contribution to journalArticlepeer-review

5 Citations (Scopus)

Abstract

The search of novel topological states, such as the quantum anomalous Hall insulator and chiral Majorana fermions, has motivated different schemes to introduce magnetism into topological insulators. A promising scheme is using the magnetic proximity effect (MPE), where a ferromagnetic insulator magnetizes the topological insulator. Most of these heterostructures are synthesized by growth techniques which prevent mixing many of the available ferromagnetic and topological insulators due to difference in growth conditions. Here, we demonstrate that MPE can be obtained in heterostructures stacked via the dry transfer of flakes of van der Waals ferromagnetic and topological insulators (Cr2Ge2Te6/BiSbTeSe2), as evidenced in the observation of an anomalous Hall effect (AHE). Furthermore, devices made from these heterostructures allow modulation of the AHE when controlling the carrier density via electrostatic gating. These results show that simple mechanical transfer of magnetic van der Waals materials provides another possible avenue to magnetize topological insulators by MPE.

Original languageEnglish
Pages (from-to)8130-8136
Number of pages7
JournalNano Letters
Volume22
Issue number20
DOIs
Publication statusPublished - 2022 Oct 26

Keywords

  • 2D ferromagnetic insulators
  • anomalous Hall effect
  • magnetic proximity effect
  • topological insulator
  • van der Waals heterostructures

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