TY - GEN
T1 - Gate-tunable control in graphene semiconductive channel
AU - Tsukagoshi, K.
AU - Miyazaki, H.
AU - Li, S. L.
AU - Kanda, A.
AU - Nakaharai, S.
PY - 2012/10/31
Y1 - 2012/10/31
N2 - We have realized a practical wide band gap in bilayer graphene. The gap was induced by an electric field applied by dual-gate sandwiching the bilayer graphene. A self-assembled gate insulator enabled us to apply a large electric field which enhanced the band gap. The wide band gap allowed for operation of a logic gate composed of bilayer graphene transistors. These results predict that graphene electronics will possibly be realized as emerging transistors with an atomically thin semiconductor.
AB - We have realized a practical wide band gap in bilayer graphene. The gap was induced by an electric field applied by dual-gate sandwiching the bilayer graphene. A self-assembled gate insulator enabled us to apply a large electric field which enhanced the band gap. The wide band gap allowed for operation of a logic gate composed of bilayer graphene transistors. These results predict that graphene electronics will possibly be realized as emerging transistors with an atomically thin semiconductor.
UR - http://www.scopus.com/inward/record.url?scp=84867907827&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84867907827&partnerID=8YFLogxK
M3 - Conference contribution
AN - SCOPUS:84867907827
SN - 9781467303996
T3 - Proceedings of the 19th International Workshop on Active-Matrix Flatpanel Displays and Devices - TFT Technologies and FPD Materials, AM-FPD 2012
SP - 305
EP - 308
BT - Proceedings of the 19th International Workshop on Active-Matrix Flatpanel Displays and Devices - TFT Technologies and FPD Materials, AM-FPD 2012
T2 - 19th International Workshop on Active-Matrix Flatpanel Displays and Devices - TFT Technologies and FPD Materials, AM-FPD 2012
Y2 - 4 July 2012 through 6 July 2012
ER -