Gate-tunable gigantic lattice deformation in VO2

D. Okuyama, M. Nakano, S. Takeshita, H. Ohsumi, S. Tardif, K. Shibuya, T. Hatano, H. Yumoto, T. Koyama, H. Ohashi, M. Takata, M. Kawasaki, T. Arima, Y. Tokura, Y. Iwasa

Research output: Contribution to journalArticlepeer-review

29 Citations (Scopus)


We examined the impact of electric field on crystal lattice of vanadium dioxide (VO2) in a field-effect transistor geometry by in-situ synchrotron x-ray diffraction measurements. Whereas the c-axis lattice parameter of VO2 decreases through the thermally induced insulator-to-metal phase transition, the gate-induced metallization was found to result in a significant increase of the c-axis length by almost 1% from that of the thermally stabilized insulating state. We also found that this gate-induced gigantic lattice deformation occurs even at the thermally stabilized metallic state, enabling dynamic control of c-axis lattice parameter by more than 1% at room temperature.

Original languageEnglish
Article number023507
JournalApplied Physics Letters
Issue number2
Publication statusPublished - 2014 Jan 13


Dive into the research topics of 'Gate-tunable gigantic lattice deformation in VO2'. Together they form a unique fingerprint.

Cite this