Gate voltage control of nuclear spin relaxation in GaAs quantum well

M. Ono; S. Matsuzaka; Y. Ohno; H. Ohno

doi:10.1007/s10948-009-0568-4

Gate voltage control of nuclear spin relaxation in GaAs quantum well

M. Ono, S. Matsuzaka, Y. Ohno, H. Ohno

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Research output: Contribution to journal › Article › peer-review

Abstract

Gate-voltage dependences of nuclear spin relaxation and decoherence times in a Schottky-gated n-GaAs/AlGaAs (110) quantum well (QW) are investigated by time-resolved Kerr-rotation measurements combined with pulsed-rf nuclear magnetic resonance (NMR). We show that the nuclear spin relaxation and decoherence times decrease with decreasing electron density, indicating that the hyperfine interaction is enhanced as the electronic states becomes localized in an impurity-doped QW.

Original language	English
Pages (from-to)	131-133
Number of pages	3
Journal	Journal of Superconductivity and Novel Magnetism
Volume	23
Issue number	1
DOIs	https://doi.org/10.1007/s10948-009-0568-4
Publication status	Published - 2010 Jan

Keywords

Dynamic nuclear polarization
Nuclear magnetic resonance
Semiconductor spintronics

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics

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10.1007/s10948-009-0568-4

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@article{5753cd2819a4409aa4ad4724efda131d,

title = "Gate voltage control of nuclear spin relaxation in GaAs quantum well",

abstract = "Gate-voltage dependences of nuclear spin relaxation and decoherence times in a Schottky-gated n-GaAs/AlGaAs (110) quantum well (QW) are investigated by time-resolved Kerr-rotation measurements combined with pulsed-rf nuclear magnetic resonance (NMR). We show that the nuclear spin relaxation and decoherence times decrease with decreasing electron density, indicating that the hyperfine interaction is enhanced as the electronic states becomes localized in an impurity-doped QW.",

keywords = "Dynamic nuclear polarization, Nuclear magnetic resonance, Semiconductor spintronics",

author = "M. Ono and S. Matsuzaka and Y. Ohno and H. Ohno",

note = "Funding Information: Acknowledgements This work was partly supported by the Grant-in-Aid for Scientific Research (No. 17686001, and No. 19048007 and No. 19048008 in Priority Area “Creation and control of spin current”) from the Ministry of Education, Culture, Sports, Science, and Technology (MEXT), and the Global COE Program Center of Education and Research for Information Electronics Systems at Tohoku University.",

year = "2010",

month = jan,

doi = "10.1007/s10948-009-0568-4",

language = "English",

volume = "23",

pages = "131--133",

journal = "Journal of Superconductivity and Novel Magnetism",

issn = "1557-1939",

publisher = "Springer New York",

number = "1",

}

TY - JOUR

T1 - Gate voltage control of nuclear spin relaxation in GaAs quantum well

AU - Ono, M.

AU - Matsuzaka, S.

AU - Ohno, Y.

AU - Ohno, H.

N1 - Funding Information: Acknowledgements This work was partly supported by the Grant-in-Aid for Scientific Research (No. 17686001, and No. 19048007 and No. 19048008 in Priority Area “Creation and control of spin current”) from the Ministry of Education, Culture, Sports, Science, and Technology (MEXT), and the Global COE Program Center of Education and Research for Information Electronics Systems at Tohoku University.

PY - 2010/1

Y1 - 2010/1

N2 - Gate-voltage dependences of nuclear spin relaxation and decoherence times in a Schottky-gated n-GaAs/AlGaAs (110) quantum well (QW) are investigated by time-resolved Kerr-rotation measurements combined with pulsed-rf nuclear magnetic resonance (NMR). We show that the nuclear spin relaxation and decoherence times decrease with decreasing electron density, indicating that the hyperfine interaction is enhanced as the electronic states becomes localized in an impurity-doped QW.

AB - Gate-voltage dependences of nuclear spin relaxation and decoherence times in a Schottky-gated n-GaAs/AlGaAs (110) quantum well (QW) are investigated by time-resolved Kerr-rotation measurements combined with pulsed-rf nuclear magnetic resonance (NMR). We show that the nuclear spin relaxation and decoherence times decrease with decreasing electron density, indicating that the hyperfine interaction is enhanced as the electronic states becomes localized in an impurity-doped QW.

KW - Dynamic nuclear polarization

KW - Nuclear magnetic resonance

KW - Semiconductor spintronics

UR - http://www.scopus.com/inward/record.url?scp=73349134008&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=73349134008&partnerID=8YFLogxK

U2 - 10.1007/s10948-009-0568-4

DO - 10.1007/s10948-009-0568-4

M3 - Article

AN - SCOPUS:73349134008

SN - 1557-1939

VL - 23

SP - 131

EP - 133

JO - Journal of Superconductivity and Novel Magnetism

JF - Journal of Superconductivity and Novel Magnetism

IS - 1

ER -

Gate voltage control of nuclear spin relaxation in GaAs quantum well

Abstract

Keywords

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