We fabricated laterally coupled vertical double-dot devices and measured their electrical transport properties. In these devices, two dots are laterally coupled in parallel and connected to a common source, and drain contacts placed above, and below the two dots. The number of electrons in each dot and the inter-dot tunnel coupling are all tunable. The inter-dot tunnel coupling was changed between the weak and strong coupling regimes, as a function of gate voltage placed between two dots. When a magnetic field was applied parallel to the plane of the two dots and source/drain contacts, we observed oscillations of the current (Aharanov-Bohm oscillation) in the weak coupling regime (for a different device).
|Number of pages||4|
|Journal||Physica E: Low-Dimensional Systems and Nanostructures|
|Publication status||Published - 2004 Apr|
|Event||15th International Conference on ELectronic Propreties - Nara, Japan|
Duration: 2003 Jul 14 → 2003 Jul 18
- Aharanov-Bohm oscillation
- Tunnel coupling