Gate voltage dependence of noise distribution in radio-frequency reflectometry in gallium arsenide quantum dots

Motoya Shinozaki; Yui Muto; Takahito Kitada; Takashi Nakajima; Matthieu R. Delbecq; Jun Yoneda; Kenta Takeda; Akito Noiri; Takumi Ito; Arne Ludwig; Andreas D. Wieck; Seigo Tarucha; Tomohiro Otsuka

doi:10.35848/1882-0786/abe41f

Gate voltage dependence of noise distribution in radio-frequency reflectometry in gallium arsenide quantum dots

Motoya Shinozaki, Yui Muto, Takahito Kitada, Takashi Nakajima, Matthieu R. Delbecq, Jun Yoneda, Kenta Takeda, Akito Noiri, Takumi Ito, Arne Ludwig, Andreas D. Wieck, Seigo Tarucha, Tomohiro Otsuka

Advanced Institute for Materials Research (AIMR)

Research output: Contribution to journal › Article › peer-review

1 Citation (Scopus)

Abstract

We investigate gate voltage dependence of electrical readout noise in high-speed rf reflectometry using gallium arsenide quantum dots. The fast Fourier transform spectrum from the real time measurement reflects build-in device noise and circuit noise including the resonator and the amplifier. We separate their noise spectral components by model analysis. Detail of gate voltage dependence of the flicker noise is investigated and compared to the charge sensor sensitivity. We point out that the dominant component of the readout noise changes by the measurement integration time.

Original language	English
Article number	035002
Journal	Applied Physics Express
Volume	14
Issue number	3
DOIs	https://doi.org/10.35848/1882-0786/abe41f
Publication status	Published - 2021 Mar

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Shinozaki, M., Muto, Y., Kitada, T., Nakajima, T., Delbecq, M. R., Yoneda, J., Takeda, K., Noiri, A., Ito, T., Ludwig, A., Wieck, A. D., Tarucha, S., & Otsuka, T. (2021). Gate voltage dependence of noise distribution in radio-frequency reflectometry in gallium arsenide quantum dots. Applied Physics Express, 14(3), Article 035002. https://doi.org/10.35848/1882-0786/abe41f

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title = "Gate voltage dependence of noise distribution in radio-frequency reflectometry in gallium arsenide quantum dots",

abstract = "We investigate gate voltage dependence of electrical readout noise in high-speed rf reflectometry using gallium arsenide quantum dots. The fast Fourier transform spectrum from the real time measurement reflects build-in device noise and circuit noise including the resonator and the amplifier. We separate their noise spectral components by model analysis. Detail of gate voltage dependence of the flicker noise is investigated and compared to the charge sensor sensitivity. We point out that the dominant component of the readout noise changes by the measurement integration time.",

author = "Motoya Shinozaki and Yui Muto and Takahito Kitada and Takashi Nakajima and Delbecq, {Matthieu R.} and Jun Yoneda and Kenta Takeda and Akito Noiri and Takumi Ito and Arne Ludwig and Wieck, {Andreas D.} and Seigo Tarucha and Tomohiro Otsuka",

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year = "2021",

month = mar,

doi = "10.35848/1882-0786/abe41f",

language = "English",

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journal = "Applied Physics Express",

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T1 - Gate voltage dependence of noise distribution in radio-frequency reflectometry in gallium arsenide quantum dots

AU - Shinozaki, Motoya

AU - Muto, Yui

AU - Kitada, Takahito

AU - Nakajima, Takashi

AU - Delbecq, Matthieu R.

AU - Yoneda, Jun

AU - Takeda, Kenta

AU - Noiri, Akito

AU - Ito, Takumi

AU - Ludwig, Arne

AU - Wieck, Andreas D.

AU - Tarucha, Seigo

AU - Otsuka, Tomohiro

PY - 2021/3

Y1 - 2021/3

N2 - We investigate gate voltage dependence of electrical readout noise in high-speed rf reflectometry using gallium arsenide quantum dots. The fast Fourier transform spectrum from the real time measurement reflects build-in device noise and circuit noise including the resonator and the amplifier. We separate their noise spectral components by model analysis. Detail of gate voltage dependence of the flicker noise is investigated and compared to the charge sensor sensitivity. We point out that the dominant component of the readout noise changes by the measurement integration time.

AB - We investigate gate voltage dependence of electrical readout noise in high-speed rf reflectometry using gallium arsenide quantum dots. The fast Fourier transform spectrum from the real time measurement reflects build-in device noise and circuit noise including the resonator and the amplifier. We separate their noise spectral components by model analysis. Detail of gate voltage dependence of the flicker noise is investigated and compared to the charge sensor sensitivity. We point out that the dominant component of the readout noise changes by the measurement integration time.

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DO - 10.35848/1882-0786/abe41f

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VL - 14

JO - Applied Physics Express

JF - Applied Physics Express

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ER -

Gate voltage dependence of noise distribution in radio-frequency reflectometry in gallium arsenide quantum dots

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