@article{d99e443009024807b298c44756c5af81,
title = "Gate voltage dependence of nuclear spin relaxation in an impurity-doped semiconductor quantum well",
abstract = "We investigated the gate voltage dependence of the nuclear spin relaxation in a Schottky-gated n -GaAs/AlGaAs (110) quantum well by the time-resolved Kerr rotation measurement combined with the nuclear magnetic resonance technique. The Fermi contact hyperfine interaction is enhanced by decreasing the background electron density, as the electrons become localized at impurity site. The energy relaxation time T1 and the decay time of the Rabi oscillation T 2Rabi can be controlled by more than a factor of 10 and a factor of ∼2, respectively.",
author = "M. Ono and H. Kobayashi and S. Matsuzaka and Y. Ohno and H. Ohno",
note = "Funding Information: This work was partly supported by the Grant-in-Aid for JSPS Fellows and Scientific Research (Grant Nos. 17686001, 19048007, and 19048008 in Priority Area “Creation and control of spin current”) from the Ministry of Education, Culture, Sports, Science, and Technology (MEXT), and the Global COE Program Center of Education and Research for Information Electronics Systems at Tohoku University.",
year = "2010",
doi = "10.1063/1.3309687",
language = "English",
volume = "96",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics",
number = "7",
}