TY - JOUR
T1 - Gate-Voltage Dependence of Zero-Bias Anomalies in Multiwall Carbon Nanotubes
AU - Kanda, Akinobu
AU - Tsukagoshi, Kazuhito
AU - Aoyagi, Yoshinobu
AU - Ootuka, Youiti
PY - 2004/1/1
Y1 - 2004/1/1
N2 - Temperature dependence of zero-bias conductance of the vanadium (V)/multiwall carbon nanotube (MWNT)/V structure is studied. As temperature is reduced, the conductance decreases with a functional form consistent with a power law. For the first time, we find that the exponent depends significantly on gate voltage. This exponent dependence cannot be explained by Luttinger-liquid theory for ballistic MWNTs. We interpret the obtained results within the framework of the nonconventional Coulomb blockade theory for strongly disordered MWNTs.
AB - Temperature dependence of zero-bias conductance of the vanadium (V)/multiwall carbon nanotube (MWNT)/V structure is studied. As temperature is reduced, the conductance decreases with a functional form consistent with a power law. For the first time, we find that the exponent depends significantly on gate voltage. This exponent dependence cannot be explained by Luttinger-liquid theory for ballistic MWNTs. We interpret the obtained results within the framework of the nonconventional Coulomb blockade theory for strongly disordered MWNTs.
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U2 - 10.1103/PhysRevLett.92.036801
DO - 10.1103/PhysRevLett.92.036801
M3 - Article
AN - SCOPUS:85038289497
SN - 0031-9007
VL - 92
JO - Physical Review Letters
JF - Physical Review Letters
IS - 3
ER -