Ge-dot formation on Si(111)-7 × 7 surface with C predeposition using monomethylsilane

Yuzuru Narita; Masashi Sakai; Takeshi Murata; Tetsuo Endoh; Maki Suemitsu

doi:10.1143/JJAP.44.L123

Ge-dot formation on Si(111)-7 × 7 surface with C predeposition using monomethylsilane

Yuzuru Narita, Masashi Sakai, Takeshi Murata, Tetsuo Endoh, Maki Suemitsu

ENG - Electrical Engineering

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

The effects of carbon (C) predeposition using monomethylsilane (MMS) on germanium (Ge) dot formation on a Si(111)-7 × 7 surface have been investigated. As a result, the C gas source was found to be effective, equally as the solid source, in reducing and densifying the Ge dots. In addition, the Si adatoms supplied from MMS show a positive effect in aligning the Ge dots. Raman spectra evaluation indicated that the Ge dots at higher MMS exposures (>80 L) were nearly dislocation free.

Original language	English
Pages (from-to)	L123-L125
Journal	Japanese Journal of Applied Physics, Part 2: Letters
Volume	44
Issue number	1-7
DOIs	https://doi.org/10.1143/JJAP.44.L123
Publication status	Published - 2005

Keywords

GSMBE
Ge dot
Germane
Monomethylsilane
Si(111 )-7 × 7

ASJC Scopus subject areas

Engineering(all)
Physics and Astronomy(all)

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10.1143/JJAP.44.L123

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title = "Ge-dot formation on Si(111)-7 × 7 surface with C predeposition using monomethylsilane",

abstract = "The effects of carbon (C) predeposition using monomethylsilane (MMS) on germanium (Ge) dot formation on a Si(111)-7 × 7 surface have been investigated. As a result, the C gas source was found to be effective, equally as the solid source, in reducing and densifying the Ge dots. In addition, the Si adatoms supplied from MMS show a positive effect in aligning the Ge dots. Raman spectra evaluation indicated that the Ge dots at higher MMS exposures (>80 L) were nearly dislocation free.",

keywords = "GSMBE, Ge dot, Germane, Monomethylsilane, Si(111 )-7 × 7",

author = "Yuzuru Narita and Masashi Sakai and Takeshi Murata and Tetsuo Endoh and Maki Suemitsu",

year = "2005",

doi = "10.1143/JJAP.44.L123",

language = "English",

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T1 - Ge-dot formation on Si(111)-7 × 7 surface with C predeposition using monomethylsilane

AU - Narita, Yuzuru

AU - Sakai, Masashi

AU - Murata, Takeshi

AU - Endoh, Tetsuo

AU - Suemitsu, Maki

PY - 2005

Y1 - 2005

N2 - The effects of carbon (C) predeposition using monomethylsilane (MMS) on germanium (Ge) dot formation on a Si(111)-7 × 7 surface have been investigated. As a result, the C gas source was found to be effective, equally as the solid source, in reducing and densifying the Ge dots. In addition, the Si adatoms supplied from MMS show a positive effect in aligning the Ge dots. Raman spectra evaluation indicated that the Ge dots at higher MMS exposures (>80 L) were nearly dislocation free.

AB - The effects of carbon (C) predeposition using monomethylsilane (MMS) on germanium (Ge) dot formation on a Si(111)-7 × 7 surface have been investigated. As a result, the C gas source was found to be effective, equally as the solid source, in reducing and densifying the Ge dots. In addition, the Si adatoms supplied from MMS show a positive effect in aligning the Ge dots. Raman spectra evaluation indicated that the Ge dots at higher MMS exposures (>80 L) were nearly dislocation free.

KW - GSMBE

KW - Ge dot

KW - Germane

KW - Monomethylsilane

KW - Si(111 )-7 × 7

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VL - 44

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JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

IS - 1-7

ER -

Ge-dot formation on Si(111)-7 × 7 surface with C predeposition using monomethylsilane

Abstract

Keywords

ASJC Scopus subject areas

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