The effects of carbon (C) predeposition using monomethylsilane (MMS) on germanium (Ge) dot formation on a Si(111)-7 × 7 surface have been investigated. As a result, the C gas source was found to be effective, equally as the solid source, in reducing and densifying the Ge dots. In addition, the Si adatoms supplied from MMS show a positive effect in aligning the Ge dots. Raman spectra evaluation indicated that the Ge dots at higher MMS exposures (>80 L) were nearly dislocation free.
|Journal||Japanese Journal of Applied Physics, Part 2: Letters|
|Publication status||Published - 2005|
- Ge dot
- Si(111 )-7 × 7
ASJC Scopus subject areas
- Physics and Astronomy(all)