Generation of second harmonics in Ge-doped SiO2 thin films by ultraviolet irradiation under poling electric field

J. Khaled; T. Fujiwara; M. Ohama; A. J. Ikushima

doi:10.1063/1.372152

Generation of second harmonics in Ge-doped SiO₂ thin films by ultraviolet irradiation under poling electric field

J. Khaled, T. Fujiwara, M. Ohama, A. J. Ikushima

ENG - Applied Physics

Toyota Technological Institute

Research output: Contribution to journal › Article › peer-review

22 Citations (Scopus)

Abstract

Thin films of Ge-doped silica were prepared by radio-frequency sputtering in a controlled atmosphere of Ar and O₂ and then subjected to ultraviolet irradiation under poling electric field (UV poling). Effects of oxygen mass flow content during the sputtering on the second-order nonlinearity of the films were investigated. Second harmonic generation (SHG) was observed and its intensity was found to depend greatly on the oxygen mass flow content with an optimum at 1 cm³/min. The annealing in a vacuum enhanced SHG intensity and values as high as 12.5±0.6 pm/V have been achieved with films containing 50 mole% of GeO₂. This is on one hand, and we also found that loading thin films with hydrogen prior to UV poling largely improved the decay of SHG. A decay time as long as 7 years has been obtained. The change in second-order optical nonlinear properties of the films is discussed based on structural defects.

Original language	English
Pages (from-to)	2137-2141
Number of pages	5
Journal	Journal of Applied Physics
Volume	87
Issue number	5
DOIs	https://doi.org/10.1063/1.372152
Publication status	Published - 2000 Mar

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title = "Generation of second harmonics in Ge-doped SiO2 thin films by ultraviolet irradiation under poling electric field",

abstract = "Thin films of Ge-doped silica were prepared by radio-frequency sputtering in a controlled atmosphere of Ar and O2 and then subjected to ultraviolet irradiation under poling electric field (UV poling). Effects of oxygen mass flow content during the sputtering on the second-order nonlinearity of the films were investigated. Second harmonic generation (SHG) was observed and its intensity was found to depend greatly on the oxygen mass flow content with an optimum at 1 cm3/min. The annealing in a vacuum enhanced SHG intensity and values as high as 12.5±0.6 pm/V have been achieved with films containing 50 mole% of GeO2. This is on one hand, and we also found that loading thin films with hydrogen prior to UV poling largely improved the decay of SHG. A decay time as long as 7 years has been obtained. The change in second-order optical nonlinear properties of the films is discussed based on structural defects.",

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T1 - Generation of second harmonics in Ge-doped SiO2 thin films by ultraviolet irradiation under poling electric field

AU - Khaled, J.

AU - Fujiwara, T.

AU - Ohama, M.

AU - Ikushima, A. J.

PY - 2000/3

Y1 - 2000/3

N2 - Thin films of Ge-doped silica were prepared by radio-frequency sputtering in a controlled atmosphere of Ar and O2 and then subjected to ultraviolet irradiation under poling electric field (UV poling). Effects of oxygen mass flow content during the sputtering on the second-order nonlinearity of the films were investigated. Second harmonic generation (SHG) was observed and its intensity was found to depend greatly on the oxygen mass flow content with an optimum at 1 cm3/min. The annealing in a vacuum enhanced SHG intensity and values as high as 12.5±0.6 pm/V have been achieved with films containing 50 mole% of GeO2. This is on one hand, and we also found that loading thin films with hydrogen prior to UV poling largely improved the decay of SHG. A decay time as long as 7 years has been obtained. The change in second-order optical nonlinear properties of the films is discussed based on structural defects.

AB - Thin films of Ge-doped silica were prepared by radio-frequency sputtering in a controlled atmosphere of Ar and O2 and then subjected to ultraviolet irradiation under poling electric field (UV poling). Effects of oxygen mass flow content during the sputtering on the second-order nonlinearity of the films were investigated. Second harmonic generation (SHG) was observed and its intensity was found to depend greatly on the oxygen mass flow content with an optimum at 1 cm3/min. The annealing in a vacuum enhanced SHG intensity and values as high as 12.5±0.6 pm/V have been achieved with films containing 50 mole% of GeO2. This is on one hand, and we also found that loading thin films with hydrogen prior to UV poling largely improved the decay of SHG. A decay time as long as 7 years has been obtained. The change in second-order optical nonlinear properties of the films is discussed based on structural defects.

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Generation of second harmonics in Ge-doped SiO₂ thin films by ultraviolet irradiation under poling electric field

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