Geometrical effect in submicrometer channel organic field effect transistors

Touichiro Goto, Hiroshi Inokawa, Keiichi Torimitsu

Research output: Contribution to journalArticlepeer-review

1 Citation (Scopus)


The electrical behaviors of submicrometer bottom-gate bottom-contact organic field effect transistors (OFETs) with submicrometer channel lengths and channel widths were investigated. Short-channel effects (SCEs) were observed for devices with shorter channel lengths and wider channel widths. The SCEs were effectively suppressed by reducing the channel width to 50 nm. The relationship between the drain current density and the drain voltage normalized by their respective channel lengths revealed that the drain current characteristics of shorter length channels fall into two types: parasitic contact resistances at lower drain voltage and SCEs caused by the space charge limiting current at higher drain voltages. The carrier mobility was also investigated, and found to be enhanced in the narrower channel width.

Original languageEnglish
Pages (from-to)579-582
Number of pages4
JournalThin Solid Films
Issue number2
Publication statusPublished - 2009 Nov 30


  • Carrier mobility
  • Organic field effect transistors
  • Semiconducting polymers
  • Short-channel effects
  • Threshold voltage


Dive into the research topics of 'Geometrical effect in submicrometer channel organic field effect transistors'. Together they form a unique fingerprint.

Cite this