TY - JOUR
T1 - Geometry dependence of temperature coefficient of resonant frequency in highly sensitive resonant thermal sensors
AU - Inomata, Naoki
AU - Ono, Takahito
N1 - Publisher Copyright:
© 2017 The Japan Society of Applied Physics.
PY - 2017/8
Y1 - 2017/8
N2 - In this paper, the geometry dependence of the temperature coefficient of resonant frequency (TCRF) is investigated and compared with a theoretical thermal stress change using Si mechanical microresonators. The used resonators have Y, T, I (conventional double-supported type) and arrow shapes, and in each shape the resonant frequency change of the resonator is measured in relation to changes in the amount of heat input to the resonator. The change trend in the experimental resonant frequency and the theoretical thermal stress in changing the temperature are consist. The TCRF in each resonator is Y: %653, T: %162, I: %417, and the arrow is 174 ppm/K. These absolute values are much higher than those of conventional cantilevered Si resonators (%34.9 ppm/K). In addition, the frequency fluctuations based on Allan deviation are experimentally evaluated considering the theoretical thermal fluctuation noise. It is considered that use of this technique to improve the TCRF of resonators by changing the geometry has the possibility of creating a sensor with highly sensitive thermal detection.
AB - In this paper, the geometry dependence of the temperature coefficient of resonant frequency (TCRF) is investigated and compared with a theoretical thermal stress change using Si mechanical microresonators. The used resonators have Y, T, I (conventional double-supported type) and arrow shapes, and in each shape the resonant frequency change of the resonator is measured in relation to changes in the amount of heat input to the resonator. The change trend in the experimental resonant frequency and the theoretical thermal stress in changing the temperature are consist. The TCRF in each resonator is Y: %653, T: %162, I: %417, and the arrow is 174 ppm/K. These absolute values are much higher than those of conventional cantilevered Si resonators (%34.9 ppm/K). In addition, the frequency fluctuations based on Allan deviation are experimentally evaluated considering the theoretical thermal fluctuation noise. It is considered that use of this technique to improve the TCRF of resonators by changing the geometry has the possibility of creating a sensor with highly sensitive thermal detection.
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U2 - 10.7567/JJAP.56.087201
DO - 10.7567/JJAP.56.087201
M3 - Article
AN - SCOPUS:85026441464
SN - 0021-4922
VL - 56
JO - Japanese Journal of Applied Physics
JF - Japanese Journal of Applied Physics
IS - 8
M1 - 087201
ER -